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XP1033-QT-0G0T PDF预览

XP1033-QT-0G0T

更新时间: 2024-09-18 21:06:59
品牌 Logo 应用领域
MIMIX 射频微波
页数 文件大小 规格书
6页 306K
描述
Wide Band Medium Power Amplifier, 13000MHz Min, 16500MHz Max, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, QFN-16

XP1033-QT-0G0T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84构造:COMPONENT
增益:15 dB最大输入功率 (CW):15 dBm
JESD-609代码:e3最大工作频率:16500 MHz
最小工作频率:13000 MHz最高工作温度:85 °C
最低工作温度:-55 °C射频/微波设备类型:WIDE BAND MEDIUM POWER
端子面层:Matte Tin (Sn)Base Number Matches:1

XP1033-QT-0G0T 数据手册

 浏览型号XP1033-QT-0G0T的Datasheet PDF文件第2页浏览型号XP1033-QT-0G0T的Datasheet PDF文件第3页浏览型号XP1033-QT-0G0T的Datasheet PDF文件第4页浏览型号XP1033-QT-0G0T的Datasheet PDF文件第5页浏览型号XP1033-QT-0G0T的Datasheet PDF文件第6页 
13.0-16.5 GHz Power Amplifier  
QFN, 3x3mm  
November 2007 - Rev 13-Nov-07  
P1033-QT  
Features  
15 dB Small Signal Gain  
25 dBm P1dB Compression Point  
35 dBm Output IP3 Linearity  
3x3mm Standard QFN Package  
100% RF, DC and Testing  
General Description  
The XP1033-QT is a packaged driver amplifier that  
operates over the 13.0-16.5 GHz frequency band. The  
device provides 15 dB gain and 35 dBm Output Third  
Order Intercept Point (OIP3) across the band and is  
offered in an industry standard, fully molded 3x3mm  
QFN package. The device includes on-chip ESD  
protection structures and DC by-pass capacitors to  
ease the implementation and volume assembly of the  
packaged part. The device is manufactured in 0.5um  
GaAs PHEMT device technology with BCB wafer  
coating to enhance ruggedness and repeatability of  
performance. XP1033-QT is well suited for  
Absolute Maximum Ratings1  
Supply Voltage (Vd1,2,3)  
Supply Current (Id1,2,3)  
+6V  
550 mA  
Gate Bias Voltage (Vg1,2,3) -3V  
Max Power Dissipation (Pdiss) 3.2W  
RF Input Power  
15 dBm  
Operating Temperature (Ta) -55 to +85 ºC  
Storage Temperature (Tstg) -65 to 150 ºC  
Channel Temperature (Tch) -40 to MTTF Graph2  
(1) Operation of this device above any one of these parameters  
may cause permanent damage.  
(2) Channel temperature directly affects a device’s MTTF.  
Channel temperature should be kept as low as possible to  
maximize lifetime  
Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Units  
GHz  
dB  
dB  
dB  
Min.  
13  
Typ.  
-
Max.  
16.5  
Small Signal Gain (S21)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Reverse Isolation (S12)  
Psat  
15  
12  
10  
50  
25  
35  
5
dB  
dBm  
dBm  
VDC  
VDC  
mA  
mA  
mA  
OIP3  
Drain Bias Voltage (Vd1,2,3)  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id1)  
Supply Current (Id2)  
Supply Current (Id3)  
-2  
-1  
100  
160  
200  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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