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XP1043-QH_10 PDF预览

XP1043-QH_10

更新时间： 2024-09-18 07:56:51
品牌 Logo 应用领域
MIMIX 放大器功率放大器
页数 文件大小 规格书
7页 840K
描述
12.0-16.0 GHz Power Amplifier

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XP1043-QH_10 数据手册

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12.0-16.0 GHz Power Amplifier  
QFN, 4x4mm  
February 2010 - Rev 13-Feb-10  
P1043-QH  
Features  
32 dBm Saturated RF Power  
41 dBm Output IP3 Linearity  
17 dB Gain Control  
On-Chip Power Detector  
4x4mm Standard QFN Package  
100% RF Testing  
General Description  
Absolute Maximum Ratings1  
The XP1043-QH is a packaged linear power amplifier that  
operates over the 12.0-16.0 GHz frequency band. The  
device provides 21.5 dB gain and 41 dBm Output Third  
Order Intercept Point (OIP3) across the band and is offered  
in an industry standard, fully molded 4x4mm QFN package.  
The packaged amplifier is comprised of a three stage  
power amplifier with an integrated, temperature  
Supply Voltage (Vd1,2,3)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg1,2,3)  
Max Power Dissipation (Pdiss)  
RF Input Power  
Operating Temperature (Ta)  
Storage Temperature (Tstg)  
Channel Temperature (Tch)  
MSL Level (MSL)  
+8.0V  
1500 mA  
-2.4V  
5.5W  
+19 dBm  
-55 to +85 ºC  
-65 to +150 ºC  
165 ºC  
compensated on-chip power detector. The device includes  
on-chip ESD protection structures and DC by-pass  
capacitors to ease the implementation and volume  
assembly of the packaged part. The device is  
manufactured in GaAs PHEMT device technology with BCB  
wafer coating to enhance ruggedness and repeatability of  
performance. XP1043-QH is well suited for Point-to-Point  
Radio, LMDS, SATCOM and VSAT applications.  
MSL3  
ESD Min. - Machine Model (MM)  
Class A  
ESD Min. - Human Body Model (HBM) Class 1A  
(1) Minimum specifications are set under nominal (typ.) bias conditions.  
Bias can be adjusted higher to achieve greater linearity and power;  
however, maximum total power dissipated is specified at 5.5 W  
(2) Channel temperature directly affects a device’s MTTF. Channel  
temperature should be kept as low as possible to maximize lifetime.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Min.1  
12.0  
19.0  
10.0  
10.0  
Typ.  
-
Max.  
16.0  
Parameter  
Frequency Range (f)  
Units  
GHz  
dB  
dB  
dB  
Small Signal Gain (S21)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Reverse Isolation (S12)  
P1dB  
21.5  
15.0  
10.0  
55.0  
30.0  
32.0  
41.0  
37.0  
7.0  
dB  
dBm  
dBm  
dBm  
dB  
VDC  
VDC  
VDC  
mA  
mA  
mA  
Psat  
31.0  
40.0  
-
OIP3 at Pout = 18 dBm per Tone  
Power Detector Range  
Drain Bias Voltage (Vd1,2,3)  
Detector Bias Voltage (Vdet,ref)  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id1)  
Supply Current (Id2)  
Supply Current (Id3)  
-
7.0  
5.0  
-2  
-1.0  
100  
200  
400  
0.0  
200  
400  
800  
(1) Note: Minimum specifications are set under nominal (typ.) bias conditions.  
Bias can be adjusted higher to achieve greater linearity and power.  
Page 1 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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