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XP1039-QJ-EV1

更新时间： 2024-11-10 05:53:51
品牌 Logo 应用领域
MIMIX 放大器功率放大器
页数 文件大小 规格书
6页 884K
描述
5.6-7.1 GHz Linear 4W Power Amplifier 6x6mm QFN

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XP1039-QJ-EV1 数据手册

 浏览型号XP1039-QJ-EV1的Datasheet PDF文件第2页浏览型号XP1039-QJ-EV1的Datasheet PDF文件第3页浏览型号XP1039-QJ-EV1的Datasheet PDF文件第4页浏览型号XP1039-QJ-EV1的Datasheet PDF文件第5页浏览型号XP1039-QJ-EV1的Datasheet PDF文件第6页 
5.6-7.1 GHz Linear 4W Power Amplifier  
6x6mm QFN  
October 2009 - Rev 08-Oct-09  
P1039-QJ  
Features  
16.5 dB Small Signal Gain  
49 dBm Third Order Intercept Point (OIP3)  
4W Saturated RF Power  
Integrated Power Detector  
6x6mm QFN Package, RoHS Compliant  
100% RF Testing  
General Description  
Absolute Maximum Ratings1,2,3  
The XP1039-QJ is a packaged linear power amplifier  
that operates over the 5.6-7.1 GHz frequency band.The  
device provides 16.5 dB gain and 49 dBm Output Third  
Order Intercept Point (OIP3) with up to 4W of saturated  
RF power.The packaged amplifier comes in an industry  
standard, fully molded 6x6mm QFN package and is  
comprised of a two stage power amplifier with an  
integrated, temperature compensated on-chip power  
detector.The device includes on-chip ESD protection  
structures and DC by-pass capacitors to ease the  
implementation and volume assembly of the  
packaged part.The XP1039-QJ provides an alternative  
solution to discrete power FETS with the added  
advantages of higher gain and linearity in a standard  
QFN package. The device is well suited for  
Supply Voltage (Vd)  
Supply Voltage (Vgg)  
Supply Current (Id1)  
Supply Current (Id2)  
Detector Pin (Vdet)  
Detector Ref Pin (Vref)  
Input Power (Pin)  
Abs. Max. Junction/Channel Temp  
Max. Operating Junction/Channel Temp 160 ºC  
Continuous Power Dissipation (Pdiss) at 85 ºC 11.2 W  
Thermal Resistance (Tchannel=160 ºC) 6.8 ºC/W  
Operating Temperature (Ta)  
Storage Temperature (Tstg)  
Mounting Temperature  
ESD Min. - Machine Model (MM)  
ESD Min. - Human Body Model (HBM)  
MSL Level  
(1) Operation of this device above any one of these parameters may cause  
permanent damage.  
+8.5V  
-2.5V  
600 mA  
1200 mA  
6V  
6V  
+25 dBm  
175 ºC  
-40 to +85 ºC  
-65 to +150 ºC  
See solder reflow profile  
Class A  
Class 1A  
MSL3  
Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
(2) Channel temperature directly affects a device’s MTTF. Channel temperature  
should be kept as low as possible to maximize lifetime.  
(3) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <17  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Small Signal Gain (S21)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Reverse Isolation (S12)  
P1dB  
Units  
GHz  
dB  
dB  
dB  
Min.  
5.6  
15.5  
Typ.  
-
16.5  
10.0  
8.0  
45.0  
35.5  
36.0  
50.0  
49.0  
24.0  
-
Max.  
7.1  
19.0  
dB  
dBm  
dBm  
dBm  
dBm  
%
dBm  
VDC  
VDC  
VDC  
mA  
34.5  
Psat  
OIP3 @ 25 dBm Pout  
OIP3 @ 28.5 dBm Pout  
PAE at Psat  
Detector Power Range  
Drain Bias Voltage (Vd)  
Detector Bias Voltage (Vdet,ref)  
Gate Bias Voltage (Vg1,2,3)  
Quiescent Supply Current (Idq)  
46  
46  
0.0  
35.0  
8.0  
5.0  
-1.0  
1400  
-2.0  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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