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XP1043-QH-EV1 PDF预览

XP1043-QH-EV1

更新时间: 2024-11-09 02:55:43
品牌 Logo 应用领域
泰科 - TE /
页数 文件大小 规格书
7页 851K
描述
32 dBm Saturated RF Power

XP1043-QH-EV1 数据手册

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XP1043-QH  
Power Amplifier  
12.0-16.0 GHz  
Rev. V1  
Features  
Functional Schematic  
nc GND GND VD1 VD2 VD3  
32 dBm Saturated RF Power  
41 dBm Output IP3 Linearity  
17 dB Gain Control  
On-Chip Power Detector  
Lead-Free 4 mm 24-lead PQFN Package  
100% RF Testing  
1
2
3
4
5
6
18  
17  
16  
15  
14  
13  
GND  
GND  
nc  
GND  
GND  
nc  
RFIN  
GND  
GND  
RFOUT  
nc  
RoHS* Compliant and 260°C Reflow Compatible  
nc  
Description  
The XP1043-QH is a packaged linear power  
amplifier that operates over the 12.0-16.0 GHz  
frequency band. The device provides 21.5 dB gain  
and 41 dBm Output Third Order Intercept Point  
(OIP3) across the band and is offered in an industry  
standard, fully molded 4x4mm QFN package. The  
packaged amplifier is comprised of a three stage  
power amplifier with an integrated, temperature  
compensated on-chip power detector. The device  
includes on-chip ESD protection structures and DC  
by-pass capacitors to ease the implementation and  
volume assembly of the packaged part. The device  
is manufactured in GaAs pHEMT device technology  
with BCB wafer coating to enhance ruggedness and  
repeatability of performance. This device is specially  
designed for use in Point-to-Point Radio systems for  
cellular backhaul applications, and is well suited for  
other telecom applications such as SATCOM and  
VSAT.  
VG1 VG2 VG3  
nc Vdet Vref  
Pin Configuration  
Pin No.  
Function  
Pin No.  
Function  
1-2  
3
Ground  
13-14  
15  
Not Connected  
RF Output  
Not Connected  
RF Input  
4
16  
Not Connected  
Ground  
5-6  
7
Ground  
17-18  
19  
Gate 1 Bias  
Gate 2 Bias  
Gate 3 Bias  
Not Connected  
Pwr Det  
Drain 3 Bias  
Drain 2 Bias  
Drain 1 Bias  
Ground  
8
20  
9
21  
10  
11  
12  
22-23  
24  
Not Connected  
Pwr Det Ref  
Absolute Maximum Ratings 1,2  
Parameter  
Absolute Max.  
Ordering Information  
Supply Voltage (Vd1,2,3)  
Supply Current (Id1,2,3)  
+8.0 V  
1500 mA  
-2.4 V  
Part Number  
XP1043-QH-0G00  
XP1043-QH-0G0T  
XP1043-QH-EV1  
Package  
bulk quantity  
Gate Bias Voltage (Vg1,2,3)  
Max Power Dissipation (Pdiss)  
RF Input Power  
tape and reel  
5.5W  
+19 dBm  
-55 °C to +85 °C  
-65 °C to +150 °C  
165 °C  
evaluation module  
Operating Temperature (Ta)  
Storage Temperature (Tstg)  
Channel Temperature (Tch)  
MSL Level (MSL)  
MSL3  
ESD Min.-Machine Model (MM)  
ESD Min.-Human Body Model (HBM)  
Class A  
Class 1A  
(1) Minimum specifications are set under nominal (typ.) bias conditions.  
Bias can be adjusted higher to achieve greater linearity and power;  
however, maximum total power dissipated is specified at 5.5 W  
(2) Channel temperature directly affects a device’s MTTF. Channel  
temperature should be kept as low as possible to maximize lifetime.  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
North America Tel: 800.366.2266 Europe Tel: +353.21.244.6400  
India Tel: +91.80.43537383  
China Tel: +86.21.2407.1588  
Visit www.macomtech.com for additional data sheets and product information.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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