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XP1043-QH-0G00 PDF预览

XP1043-QH-0G00

更新时间: 2024-09-18 03:13:59
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
5页 366K
描述
12.0-16.0 GHz Power Amplifier QFN, 4x4mm

XP1043-QH-0G00 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.14
Is Samacsys:N构造:COMPONENT
增益:19 dB最大输入功率 (CW):19 dBm
JESD-609代码:e3最大工作频率:16000 MHz
最小工作频率:12000 MHz最高工作温度:85 °C
最低工作温度:-55 °C射频/微波设备类型:WIDE BAND MEDIUM POWER
端子面层:Matte Tin (Sn)Base Number Matches:1

XP1043-QH-0G00 数据手册

 浏览型号XP1043-QH-0G00的Datasheet PDF文件第2页浏览型号XP1043-QH-0G00的Datasheet PDF文件第3页浏览型号XP1043-QH-0G00的Datasheet PDF文件第4页浏览型号XP1043-QH-0G00的Datasheet PDF文件第5页 
12.0-16.0 GHz Power Amplifier  
QFN, 4x4mm  
February 2008 - Rev 06-Feb-08  
P1043-QH  
Features  
32 dBm Saturated RF Power  
41 dBm Output IP3 Linearity  
17 dB Gain Control  
On-Chip Power Detector  
4x4mm Standard QFN Package  
100% RF Testing  
General Description  
The XP1043-QH is a packaged linear power amplifier  
that operates over the 12.0-16.0 GHz frequency band.  
The device provides 20 dB gain and 41 dBm Output  
Third Order Intercept Point (OIP3) across the band and  
is offered in an industry standard, fully molded 4x4mm  
QFN package. The packaged amplifier is comprised of  
a three stage power amplifier with an integrated,  
temperature compensated on-chip power detector.  
The device includes on-chip ESD protection structures  
and DC by-pass capacitors to ease the implementation  
and volume assembly of the packaged part. The  
device is manufactured in 0.5um GaAs PHEMT device  
technology with BCB wafer coating to enhance  
ruggedness and repeatability of performance.  
XP1043-QH is well suited for Point-to-Point Radio,  
LMDS, SATCOM and VSAT applications.  
Absolute Maximum Ratings1  
Supply Voltage (Vd1,2,3)  
Supply Current (Id1,2,3)  
+10.0V  
1500 mA  
Gate Bias Voltage (Vg1,2,3) -3V  
Max Power Dissipation (Pdiss) 8.0W  
RF Input Power  
+19 dBm  
Operating Temperature (Ta) -55 to +85 ºC  
Storage Temperature (Tstg) -65 to +150 ºC  
Channel Temperature (Tch) -40 to MTTF Graph2  
(1) Operation of this device above any one of these parameters  
may cause permanent damage.  
(2) Channel temperature directly affects a device’s MTTF.  
Channel temperature should be kept as low as possible to  
maximize lifetime.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Units  
GHz  
dB  
dB  
dB  
Min.  
12.0  
Typ.  
-
Max.  
16.0  
Small Signal Gain (S21)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Reverse Isolation (S12)  
P1dB  
20.0  
15.0  
10.0  
55.0  
30.0  
32.0  
41.0  
7.0  
dB  
dBm  
dBm  
dBm  
VDC  
VDC  
VDC  
mA  
Psat  
OIP3  
Drain Bias Voltage (Vd1,2,3)  
Detector Bias Voltage (Vdet,ref)  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id1)  
Supply Current (Id2)  
Supply Current (Id3)  
5.0  
-2  
-1.0  
100  
200  
400  
mA  
mA  
Page 1 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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