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XP1027-BD_10

更新时间： 2024-09-18 07:56:51
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页数 文件大小 规格书
11页 1315K
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27.0-31.0 GHz GaAs MMIC

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XP1027-BD_10 数据手册

 浏览型号XP1027-BD_10的Datasheet PDF文件第2页浏览型号XP1027-BD_10的Datasheet PDF文件第3页浏览型号XP1027-BD_10的Datasheet PDF文件第4页浏览型号XP1027-BD_10的Datasheet PDF文件第5页浏览型号XP1027-BD_10的Datasheet PDF文件第6页浏览型号XP1027-BD_10的Datasheet PDF文件第7页 
27.0-31.0 GHz GaAs MMIC  
Power Amplifier  
January 2010 - Rev 25-Jan-10  
P1027-BD  
Features  
Chip Device Layout  
Ka-Band 4 W Power Amplifier  
Balanced Design Provides Good Input/Output Match  
21.0 dB Small Signal Gain  
+35.5 dBm Saturated Output Power  
+43.0 dBm Output Third Order Intercept (OIP3)  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband's three stage 27.0-31.0 GHz GaAs MMIC  
power amplifier has a small signal gain of 21.0 dB with  
+35.5 dBm saturated output power.The device also  
includes Lange couplers to achieve good input/output  
return loss.This MMIC uses Mimix Broadband’s GaAs  
PHEMT device model technology, and is based upon  
electron beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect and  
provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic  
solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and  
VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC2  
325,825,1575 mA  
+0.3 VDC  
+25 dBm  
Storage Temperature (Tstg) -65 to +165 ºC  
Operating Temperature (Ta) -55 to +85 ºC  
Channel Temperature (Tch)1 175 ºC  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
(2) Under pulsed bias conditions, under CW Psat conditions  
further reduction in max supply voltage (~0.5V) is  
recommended.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)2  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Output Power for 1dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Saturated Output Power (Psat)2  
Drain Bias Voltage (Vd1,2,3)  
Units  
GHz  
dB  
dB  
dB  
Min.  
27.0  
-
-
-
-
-
-
Typ.  
-
Max.  
31.0  
-
-
-
-
-
-
-
20.0  
20.0  
21.0  
+/-1.0  
50.0  
+34.5  
+43.0  
+35.5  
+5.5  
-0.7  
dB  
dB  
dBm  
dBm  
dBm  
VDC  
VDC  
mA  
mA  
mA  
-
-
-
-
+5.8  
0.0  
300  
750  
1435  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id1) (Vd=5.5V,Vg=-0.7V Typical)  
Supply Current (Id2) (Vd=5.5V,Vg=-0.7V Typical)  
-1.0  
-
-
-
250  
625  
1185  
Supply Current (Id3) (Vd=5.5V,Vg=-0.7V Typical)  
(2) Measured on wafer pulsed.  
Page 1 of 11  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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