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XP1026-BD-000V PDF预览

XP1026-BD-000V

更新时间： 2024-09-18 03:13:59
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器功率放大器高功率电源
页数 文件大小 规格书
5页 284K
描述
27.0-32.0 GHz GaAs MMIC Power Amplifier

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XP1026-BD-000V 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.17
Is Samacsys：N构造：COMPONENT
增益：21 dB最大输入功率 (CW)：22 dBm
JESD-609代码：e3最大工作频率：32000 MHz
最小工作频率：27000 MHz最高工作温度：85 °C
最低工作温度：-55 °C射频/微波设备类型：WIDE BAND HIGH POWER
端子面层：Matte Tin (Sn)Base Number Matches：1

XP1026-BD-000V 数据手册

 浏览型号XP1026-BD-000V的Datasheet PDF文件第2页浏览型号XP1026-BD-000V的Datasheet PDF文件第3页浏览型号XP1026-BD-000V的Datasheet PDF文件第4页浏览型号XP1026-BD-000V的Datasheet PDF文件第5页 
27.0-32.0 GHz GaAs MMIC  
Power Amplifier  
February 2006 - Rev 23-Feb-07  
P1026-BD  
Features  
Chip Device Layout  
Ka-Band 2W Power Amplifier  
22.0 dB Small Signal Gain  
+33.0 dBm Saturated Output Power  
+40.0 dBm Output Third Order Intercept (OIP3)  
100% On-Wafer RF, DC and Output Power Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband's three stage 27.0-32.0 GHz GaAs  
MMIC power amplifier has a small signal gain of 22.0  
dB with +33 dBm saturated output power.This MMIC  
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device  
model technology, and is based upon electron beam  
lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This  
device is well suited for Millimeter-wave  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.5 VDC  
165,415,790 mA  
+0.3 VDC  
TBD  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Saturated Output Power (Psat)  
Drain Bias Voltage (Vd1,2,3)  
Gate Bias Voltage (Vg1,2,3)  
Units  
GHz  
dB  
dB  
dB  
Min.  
27.0  
-
-
-
-
-
-
Typ.  
-
Max.  
32.0  
-
-
-
-
-
-
+6.0  
0.0  
150  
350  
750  
10.0  
15.0  
22.0  
+/-1.0  
50.0  
+33.0  
+5.0  
-0.9  
dB  
dB  
dBm  
VDC  
VDC  
mA  
mA  
mA  
-
-1.2  
Supply Current (Id1) (Vd=5.0V,Vg=-0.7V Typical)  
Supply Current (Id2) (Vd=5.0V,Vg=-0.7V Typical)  
Supply Current (Id3) (Vd=5.0V,Vg=-0.7V Typical)  
-
-
-
100  
250  
550  
Page 1 of 5  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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