5秒后页面跳转
XP0D874(XP1D874) PDF预览

XP0D874(XP1D874)

更新时间: 2024-12-01 23:33:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 52K
描述
Composite Device - Composite Transistors

XP0D874(XP1D874) 数据手册

 浏览型号XP0D874(XP1D874)的Datasheet PDF文件第2页浏览型号XP0D874(XP1D874)的Datasheet PDF文件第3页 
Composite Transistors  
XP0D874 (XP1D874)  
N-channel junction FET  
Unit: mm  
+0.05  
–0.02  
0.12  
For low-frequency impedance conversion  
For infrared sensor  
0.20±0.05  
5
4
3
Features  
1
2
Two elements incorporated into one package  
Reduction of the mounting area and assembly cost by one half  
(0.65) (0.65)  
1.3±0.1  
2.0±0.1  
Basic Part Number of Element  
2SK1842 × 2 elements  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VGDO  
VGSO  
ID  
Rating  
Unit  
V
1: Source (FET1)  
2: Drain  
3: Source (FET2)  
4: Gain (FET2)  
5: Gain (FET1)  
EIAJ: SC-88A  
Rating  
of  
Gate to drain voltage  
Gate to source voltage  
40  
SMini5-G1 Package  
40  
V
element Drain current  
Gate current  
1
10  
mA  
mA  
mW  
°C  
Marking Symbol: EQ  
IG  
Internal Connection  
Total  
Total power dissipation  
PT  
150  
5
4
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
55 to +150  
°C  
FET1  
FET2  
1
2
3
Electrical Characteristics Ta = 25°C ± 3°C  
Parameter  
Gate to drain voltage  
Drain current  
Symbol  
VGDS  
IDSS  
Conditions  
Min  
Typ  
Max  
Unit  
V
I
G = −10 µA, VDS = 0  
40  
V
V
V
V
V
DS = 10 V, VGS = 0  
30  
200  
0.5  
3.0  
µA  
nA  
V
Gate cutoff current  
IGSS  
GS = −20 V, VDS = 0  
Gate to source cutoff voltage  
Forward transfer admittance  
VGSC  
Yfs  
DS = 10 V, ID = 1 µA  
1.3  
DS = 10 V, VGS = 0, f = 1 KHz  
DS = 10 V, VGS = 0, f = 1 MHz  
0.05  
mS  
pF  
Small-signal short-circuit  
input capacitance  
Ciss  
1.0  
0.4  
0.4  
Small-signal short-circuit  
output capacitance  
Coss  
Crss  
V
DS = 10 V, VGS = 0, f = 1 MHz  
DS = 10 V, VGS = 0, f = 1 MHz  
pF  
pF  
Small-signal reverse  
transfer capacitance  
V
Note) The part number in the parenthesis shows conventional part number.  
Publication date: May 2002  
SJJ00224BED  
1

与XP0D874(XP1D874)相关器件

型号 品牌 获取价格 描述 数据表
XP0D874|XP1D874 ETC

获取价格

Composite Device - Composite Transistors
XP0NG8A PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-88,
XP1 ZORAN

获取价格

Embedded XHTML-Print Interpreter
XP1000 MIMIX

获取价格

17.0-24.0 GHz GaAs MMIC Power Amplifier
XP1000-BD-000V MIMIX

获取价格

Wide Band Medium Power Amplifier, 17000MHz Min, 24000MHz Max, ROHS COMPLIANT, DIE-13
XP1000-BD-000W MIMIX

获取价格

Wide Band Medium Power Amplifier, 17000MHz Min, 24000MHz Max, ROHS COMPLIANT, DIE-13
XP1001 MIMIX

获取价格

26.0-40.0 GHz GaAs MMIC Power Amplifier
XP1001-BD-000V MIMIX

获取价格

Wide Band Low Power Amplifier, 26000MHz Min, 40000MHz Max, ROHS COMPLIANT, DIE-13
XP1001-BD-000W MIMIX

获取价格

Wide Band Low Power Amplifier, 26000MHz Min, 40000MHz Max, ROHS COMPLIANT, DIE-13
XP1003 MIMIX

获取价格

27.0-35.0 GHz GaAs MMIC Power Amplifier