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X28HC256SI-20T1 PDF预览

X28HC256SI-20T1

更新时间: 2024-01-09 11:01:05
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 977K
描述
LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

X28HC256SI-20T1 数据手册

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NTRODUCTION  
N
EW  
I
XP2R8OHDCUC2T56DM-12  
Rochester Electronics has re-introduced and continues to manufacture critically needed semiconductors with the full  
authorization of the original manufacturer and an attention to quality that meets or exceeds the original component.  
Original Manufacturer:  
X28HC256DM-12  
Original Part Number: X28HC256DM-12  
Description: 256K EEPROM  
Package: 28 pin DIP  
Manufacturing Flow: MTO  
Endurance: 1,000,000 cycles  
Available in Pb-Free versions  
Re-introduced by  
Rochester Electronics on  
October, 31, 2012  
Related Devices  
[ by temperature / package type / speed / application ]  
X28HC256D-12  
X28HC256D-90  
X28HC256DI-15  
X28HC256FM-90  
X28HC256JM-15T1  
X28HC256KI-15  
X28HC256DMB-15 X28HC256PM-12  
X28HC256EI-12 X28HC256KMB-15  
LOW POWER CMOS EEPROM  
with hi-speed page write capability  
The X28HC256 is  
a
second generation high  
a 24µs/byte write cycle, and enabling the entire  
memory to be typically rewritten in less than 0.8  
seconds. The X28HC256 also features DATA  
Polling and Toggle Bit Polling, two methods  
of providing early end of write detection.  
performance CMOS 32k x 8 EEPROM. It is fabricated  
with Intersil’s proprietary, textured poly floating  
gate technology, providing a highly reliable 5V only  
nonvolatile memory. The X28HC256 supports a 128-  
byte page write operation, effectively providing  
Worldwide Corporate Headquarters  
16 Malcolm Hoyt Drive . Newburyport, MA 01950  
phone 978.462.9332 . email sales@rocelec.com . web www.rocelec.com  
© Rochester Electronics, LLC - All Rights Reserved - 11162012  

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