Datasheet > X28HC256SIZ-12

X28HC256SIZ-12

更新时间： 2024-11-20 12:02:35

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
21页	977K
描述
LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM

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X28HC256SIZ-12 数据手册

–

NTRODUCTION

X^P2^R8^OH^DC^UC2^T56DM-12

Rochester Electronics has re-introduced and continues to manufacture critically needed semiconductors with the full

authorization of the original manufacturer and an attention to quality that meets or exceeds the original component.

Original Manufacturer:

X28HC256DM-12

Original Part Number: X28HC256DM-12

Description: 256K EEPROM

Package: 28 pin DIP

Manufacturing Flow: MTO

Endurance: 1,000,000 cycles

Available in Pb-Free versions

Re-introduced by

Rochester Electronics on

October, 31, 2012

Related Devices

[ by temperature / package type / speed / application ]

X28HC256D-12

X28HC256D-90

X28HC256DI-15

X28HC256FM-90

X28HC256JM-15T1

X28HC256KI-15

X28HC256DMB-15 X28HC256PM-12

X28HC256EI-12 X28HC256KMB-15

LOW POWER CMOS EEPROM

with hi-speed page write capability

The X28HC256 is

second generation high

a 24µs/byte write cycle, and enabling the entire

memory to be typically rewritten in less than 0.8

seconds. The X28HC256 also features DATA

Polling and Toggle Bit Polling, two methods

of providing early end of write detection.

performance CMOS 32k x 8 EEPROM. It is fabricated

with Intersil’s proprietary, textured poly ﬂoating

gate technology, providing a highly reliable 5V only

nonvolatile memory. The X28HC256 supports a 128-

byte page write operation, eﬀectively providing

Worldwide Corporate Headquarters

16 Malcolm Hoyt Drive . Newburyport, MA 01950

phone 978.462.9332 . email sales@rocelec.com . web www.rocelec.com

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与X28HC256SIZ-12相关器件

型号	品牌	获取价格	描述	数据表
X28HC256SIZ-15	RENESAS	获取价格	32KX8 EEPROM 5V, 150ns, PDSO28, 0.300 INCH, PLASTIC, SOIC-28
X28HC256SIZ-15	INTERSIL	获取价格	5V, Byte Alterable EEPROM
X28HC256SIZ-90	INTERSIL	获取价格	5V, Byte Alterable EEPROM
X28HC256SIZ-90	ROCHESTER	获取价格	LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM
X28HC256SM-12	XICOR	获取价格	5 Volt, Byte Alterable E2PROM
X28HC256SM-12	INTERSIL	获取价格	5 Volt, Byte Alterable EEPROM
X28HC256SM-12,	ROCHESTER	获取价格	LOW POWER CMOS EEPROM with hi-speed page write capability 256K EEPROM
X28HC256SM-12T1	XICOR	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, PLASTIC, SOIC-28
X28HC256SM-12T2	RENESAS	获取价格	32KX8 EEPROM 5V, 120ns, PDSO28, PLASTIC, SOIC-28
X28HC256SM-15	XICOR	获取价格	5 Volt, Byte Alterable E2PROM