WTM302N060US-HAF
N-Channel Enhancement Mode MOSFET
Drain
Features
• Low RDS(ON)
• Surface-mounted package
Gate
• Halogen and Antimony Free(HAF),
RoHS compliant
Source
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
DFN3030 Plastic Package
Key Parameters
Parameter
BVDSS
Value
20
Unit
V
6 @ VGS = 4.5 V
6.5 @ VGS = 2.5 V
0.6
RDS(ON) Max
mΩ
VGS(th) typ
Qg typ
V
44 @ VGS = 4.5 V
nC
Absolute Maximum Ratings(at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
± 12
V
Tc = 25℃
Tc = 100℃
63
39.7
Drain Current
ID
A
Peak Drain Current, Pulsed 1)
Avalanche Current
IDM
IAS
250
35
A
A
Single Pulse Avalanche Energy 2)
Power Dissipation
EAS
61.2
mJ
W
℃
Ptot
29
Tc = 25℃
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
4.3
Unit
℃/W
℃/W
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, IAS = 35 A, VGS = 10 V.
RθJA
60
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 08/10/2022 Rev: 02