Datasheet > WTM303P300LS

WTM303P300LS

更新时间： 2023-12-06 20:01:28

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	562K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM303P300LS 数据手册

WTM303P300LS-HAF

P-Channel Enhancement Mode MOSFET

Features

Drain

• Logic level

• Low gate charge for fast power switching

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Applications

• Load Switch

• Motor Drives

Source

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN3030 Plastic Package

Key Parameters

Parameter

-BV_DSS

Value

Unit

25 @ -V_GS= 10 V

43 @ -V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

19 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Symbol

Value

Unit

Parameter

-V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

-I_D

Drain Current

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Single Pulse Avalanche Current

Single Pulse Avalanche Energy ²⁾

Power Dissipation

-I_DM

-I_AS

20.8

E_AS

21.7

℃

P_D

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

6.6

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

℃

R_θJA

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, -I_D= 20.8 A, -V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 18/03/2021 Rev: 01

12 3 4 5 6 7 8

中文翻译

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