WTM303N040L-HAF
N-Channel Enhancement Mode MOSFET
Features
Drain
• Low RDS( ON )
• Low Gate Charge
• Halogen and Antimony Free(HAF),
Gate
RoHS compliant
Source
Application
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
DFN3030 Plastic Package
•
Motor/Body Load Control
• Load Switch
• DC-DC converters and Off-line UPS
Key Parameters
Parameter
BVDSS
Value
30
Unit
V
4 @ VGS = 10 V
6.8 @ VGS = 4.5 V
1.7
RDS(ON) Max
mΩ
VGS(th) typ
Qg typ
V
62 @ VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Symbol
Value
30
Unit
V
Parameter
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
± 20
V
Tc = 25℃
Tc = 100℃
34
27
Continuous Drain Current
ID
A
Peak Drain Current, Pulsed 1)
Avalanche Current
IDM
IAS
136
A
A
31
Single Pulse Avalanche Energy 2)
EAS
mJ
W
℃
48
31
Power Dissipation
Ptot
Tc = 25℃
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
4
Unit
Thermal Resistance from Junction to Case
℃
℃
/W
/W
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, ID = 31 A, VGS = 10 V.
RθJA
40
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 08/06/2021 Rev: 01