Datasheet > WTM303N038LK

WTM303N038LK

更新时间： 2023-12-06 20:08:34

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	1287K
描述
功率金氧半电晶体

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数据手册

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WTM303N038LK 数据手册

WTM303N038LK-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low R_DS(ON)

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

• Built-in G-S Protection Diode

Source

• Typical ESD Protection HBM Class 2

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN3030 Plastic Package

Classification Voltage Range(V)

< 125

Key Parameters

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Parameter

BV_DSS

Value

Unit

3.8 @ V_GS= 10 V

5.8 @ V_GS= 4.5 V

1.4

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

51 @ V_GS= 4.5 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Symbol

Value

Unit

Parameter

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Drain Current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

160

37.1

Single Pulse Avalanche Energy ²⁾

E_AS

68.8

℃

P_tot

Power Dissipation

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.2

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient t ≤ 10 s

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25°C, L = 0.1 mH, R_g= 25 Ω, I_AS= 37.1 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 14/07/2023 Rev: 03

12 3 4 5 6 7

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