Datasheet > WTM302P500US

WTM302P500US

更新时间： 2023-12-06 20:02:09

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	571K
描述
功率金氧半电晶体

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数据手册

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WTM302P500US 数据手册

WTM302P500US-HAF

P-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN3030 Plastic Package

Source

Key Parameters

Parameter

-BV_DSS

Value

Unit

50 @ -V_GS= 10 V

60 @ -V_GS= 4.5 V

0.7

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

12.6 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

-V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 12

T_c= 25°C

T_c= 100°C

15.7

9.9

Drain Current

-I_D

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

-I_DM

-I_AS

11.9

E_AS

℃

T_c= 25°C

P_D

11.9

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

10.4

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, -I_AS= 11.9 A, -V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 16/02/2023 Rev: 02

12 3 4 5 6 7

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