是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | 0.600 INCH, CERDIP-24 |
针数: | 24 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.61 |
风险等级: | 5.71 | Is Samacsys: | N |
最长访问时间: | 25 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-GDIP-T24 | JESD-609代码: | e0 |
长度: | 32.135 mm | 内存密度: | 65536 bit |
内存集成电路类型: | UVPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 24 |
字数: | 8192 words | 字数代码: | 8000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 8KX8 | |
输出特性: | 3-STATE | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | WDIP | 封装等效代码: | DIP24,.6 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE, WINDOW |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 认证状态: | Not Qualified |
座面最大高度: | 5.72 mm | 最大待机电流: | 0.035 A |
子类别: | EPROMs | 最大压摆率: | 0.04 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WS57C49C-25J | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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WS57C49C-25S | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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WS57C49C-25T | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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WS57C49C-35 | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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WS57C49C-35CMB | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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WS57C49C-35D | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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WS57C49C-35DMB | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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WS57C49C-35J | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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WS57C49C-35L | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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WS57C49C-35S | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM |
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