是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | QLCC | 包装说明: | CERAMIC, LLCC-28 |
针数: | 28 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.61 |
风险等级: | 5.71 | 最长访问时间: | 55 ns |
I/O 类型: | COMMON | JESD-30 代码: | S-CQCC-N28 |
JESD-609代码: | e0 | 长度: | 11.455 mm |
内存密度: | 65536 bit | 内存集成电路类型: | UVPROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 28 | 字数: | 8192 words |
字数代码: | 8000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 8KX8 | 输出特性: | 3-STATE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | WQCCN |
封装等效代码: | LCC28,.45SQ | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER, WINDOW | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
认证状态: | Not Qualified | 筛选级别: | MIL-STD-883 Class B |
座面最大高度: | 3.3 mm | 最大待机电流: | 0.035 A |
子类别: | EPROMs | 最大压摆率: | 0.095 mA |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子节距: | 1.27 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 11.455 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WS57C49C-55D | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM | |
WS57C49C-55DMB | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM | |
WS57C49C-55FMB | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM | |
WS57C49C-55J | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM | |
WS57C49C-55T | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM | |
WS57C49C-55TMB | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM | |
WS57C49C-70 | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM | |
WS57C49C-70CMB | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM | |
WS57C49C-70D | STMICROELECTRONICS |
获取价格 |
HIGH SPEED 8K x 8 CMOS PROM/RPROM | |
WS57C49C-70TMB | STMICROELECTRONICS |
获取价格 |
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM |