Datasheet > VTB5051BH

VTB5051BH

更新时间： 2024-02-20 03:42:46

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		半导体光电二极管光电二极管
页数	文件大小	规格书
1页	246K
描述
VTB Process Photodiodes

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技术参数
数据手册

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VTB5051BH 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown	HTS代码：	8541.40.60.50
风险等级：	5	最大暗电源：	0.25 nA
安装特点：	THROUGH HOLE MOUNT	最高工作温度：	110 °C
最低工作温度：	-40 °C	半导体材料：	Silicon
子类别：	Photo Diodes	表面贴装：	NO
Base Number Matches：	1

VTB5051BH 数据手册

VTB Process Photodiodes

VTB5051BH

PACKAGE DIMENSIONS inch (mm)

CASE 14 TO-5 HERMETIC

CHIP ACTIVE AREA: .023 in²(14.8 mm²)

PRODUCT DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

-40°C to 110°C

Planar silicon photodiode in a “flat” window, dual

lead TO-5 package. The package incorporates

an infrared rejection filter. Cathode is common to

the case. These diodes have very high shunt

resistance and have good blue response.

RoHS Compliant

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)

VTB5051BH

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

UNITS

Min.

Typ.

Max.

.08

Short Circuit Current

I Temperature Coefficient

H = 100 fc, 2850 K

2850 K

.02

µA

%/°C

TC I

Open Circuit Voltage

Temperature Coefficient

H = 100 fc, 2850 K

2850 K

420

-2.0

TC V

mV/°C

Dark Current

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

250

720

Shunt Resistance

.56

-8.0

3.0

GΩ

TC R

Temperature Coefficient

%/°C

Junction Capacitance

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

330

range

580

1/2

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

±50

Degrees

W ⁄ Hz

cm Hz ⁄ W

-14

NEP

3.7 x 10 (Typ.)

1.0 x 10 (Typ.)

PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7

Phone: 877-734-6786 Fax: 450-424-3413

www.perkinelmer.com/opto

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