Datasheet > VTB5051UV

VTB5051UV

更新时间： 2024-02-21 18:13:44

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		半导体光电二极管光电二极管
页数	文件大小	规格书
1页	31K
描述
VTB Process Photodiodes

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中文翻译

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技术参数
数据手册

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VTB5051UV 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown	HTS代码：	8541.40.60.50
风险等级：	5	最大暗电源：	0.25 nA
安装特点：	THROUGH HOLE MOUNT	最高工作温度：	110 °C
最低工作温度：	-40 °C	半导体材料：	Silicon
子类别：	Photo Diodes	表面贴装：	NO
Base Number Matches：	1

VTB5051UV 数据手册

VTB Process Photodiodes

VTB5051UV

PACKAGE DIMENSIONS inch (mm)

CASE 14 TO-5 HERMETIC

CHIP ACTIVE AREA: .023 in²(14.8 mm²)

PRODUCT DESCRIPTION

Planar silicon photodiode in a dual lead TO-5

ABSOLUTE MAXIMUM RATINGS

package with a UV transmitting “flat” window.

Chip is common to the case. These diodes have

very high shunt resistance and have good blue

response.

Storage Temperature:

Operating Temperature:

-40°C to 110°C

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)

VTB5051UV

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

UNITS

Min.

Typ.

Max.

.23

Short Circuit Current

I Temperature Coefficient

H = 100 fc, 2850 K

2850 K

130

.12

µA

%/°C

TC I

Open Circuit Voltage

Temperature Coefficient

H = 100 fc, 2850 K

2850 K

490

-2.0

TC V

mV/°C

Dark Current

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

250

Shunt Resistance

.56

-8.0

3.0

0.1

GΩ

TC R

Temperature Coefficient

%/°C

Junction Capacitance

Sensitivity

365 nm

A/W

Sensitivity

220 nm

.038

200

A/W

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

1100

range

920

1/2

±50

Degrees

W ⁄ Hz

cm Hz / W

-14

NEP

2.1 x 10 (Typ.)

1.8 x 10 (Typ.)

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

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