Datasheet > VTB6061CIE

VTB6061CIE

更新时间： 2024-02-22 02:27:47

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		半导体光电二极管光电二极管
页数	文件大小	规格书
1页	32K
描述
VTB Process Photodiodes

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技术参数
数据手册

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VTB6061CIE 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.59
最大暗电源：	2 nA	安装特点：	THROUGH HOLE MOUNT
最高工作温度：	110 °C	最低工作温度：	-40 °C
半导体材料：	Silicon	子类别：	Photo Diodes
表面贴装：	NO	Base Number Matches：	1

VTB6061CIE 数据手册

VTB Process Photodiodes

VTB6061CIE

PACKAGE DIMENSIONS inch (mm)

PRODUCT DESCRIPTION

CASE 15 TO-8 HERMETIC

CHIP ACTIVE AREA: .058 in²(37.7 mm²)

VTB6061CIE vs HUMAN EYE RESPONSE

Large area planar silicon photodiode in a “flat”

window, dual lead TO-8 package. This photodiode is

a spectrally modified VTB6061B with a spectral

response closely resembling that of the human eye,

making it an ideal choice for photometric calibrations.

Its high shunt impedance permits accurate

measurement of low illuminations.

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

-55°C to 50°C

Operating Temperature: -55°C to 50°C

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)

VTB6061CIE

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

UNITS

Min.

Typ.

Max.

H = 1.0 fc

120

nA/fc

nA/lux

GΩ

Photometric Sensitivity

Shunt Resistance

H = 1.0 lux

H = 0, V -10 mV

H = 0, VR = 2.0 V

H = 0, V = 0

.10

-8.0

TC R

Temperature Coefficient

%/°C

Dark Current

2.0

Junction Capacitance

Spectral Response - Peak

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

8.0

555

±55

Degrees

W⁄ Hz

1/2

-13

NEP

1.3 x 10 (Typ.)

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

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