Datasheet > VTB8440

VTB8440

更新时间： 2024-02-27 13:57:02

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		光电二极管光电二极管
页数	文件大小	规格书
1页	29K
描述
VTB Process Photodiodes

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中文翻译

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技术参数
数据手册

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VTB8440 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	HTS代码：	8541.40.60.50
风险等级：	5.26	最大暗电源：	2 nA
安装特点：	THROUGH HOLE MOUNT	最高工作温度：	70 °C
最低工作温度：	-20 °C	半导体材料：	Silicon
子类别：	Photo Diodes	表面贴装：	NO

VTB8440 数据手册

VTB Process Photodiodes

VTB8440, 8441

PACKAGE DIMENSIONS inch (mm)

CASE 21 8 mm CERAMIC

CHIP ACTIVE AREA: .008 in²(5.16 mm²)

PRODUCT DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

-20°C to 75°C

Planar silicon photodiode in a recessed ceramic

package. Chip is coated with a protective layer

of epoxy. These diodes have very high shunt

resistance and have good blue response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)

VTB8440

VTB8441

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

UNITS

Min.

Typ.

Max.

.23

Min.

Typ.

Max.

.23

Short Circuit Current

I Temperature Coefficient

H = 100 fc, 2850 K

2850 K

.12

µA

%/°C

TC I

Open Circuit Voltage

Temperature Coefficient

H = 100 fc, 2850 K

2850 K

490

-2.0

490

-2.0

TC V

mV/°C

Dark Current

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

2000

1100

100

Shunt Resistance

.07

-8.0

1.0

.10

1.4

-8.0

1.0

.10

GΩ

TC R

Temperature Coefficient

%/°C

Junction Capacitance

Sensitivity

365 nm

A/W

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

320

1100

range

920

1/2

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

±50

-14

±50

-14

Degrees

W⁄ Hz

cm Hz / W

NEP

5.9 x 10 (Typ.)

1.3 x 10 (Typ.)

3.9 x 10 (Typ.)

1.7 x 10 (Typ.)

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

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