VTB Process Photodiodes
VTB8440, 8441
PACKAGE DIMENSIONS inch (mm)
CASE 21 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in2 (5.16 mm2)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
Planar silicon photodiode in a recessed ceramic
package. Chip is coated with a protective layer
of epoxy. These diodes have very high shunt
resistance and have good blue response.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
VTB8440
VTB8441
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
35
Typ.
Max.
.23
Min.
35
Typ.
Max.
.23
I
Short Circuit Current
I Temperature Coefficient
SC
H = 100 fc, 2850 K
2850 K
45
.12
45
.12
µA
%/°C
mV
SC
TC I
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
490
-2.0
490
-2.0
OC
TC V
V
mV/°C
pA
OC
OC
I
Dark Current
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
2000
1100
100
D
R
Shunt Resistance
.07
-8.0
1.0
.10
1.4
-8.0
1.0
.10
GΩ
SH
TC R
R
Temperature Coefficient
%/°C
nF
SH
SH
C
Junction Capacitance
Sensitivity
J
S
365 nm
A/W
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
320
2
320
2
1100
nm
range
λ
920
40
920
40
nm
p
V
V
BR
1/2
θ
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
±50
-14
±50
-14
Degrees
W⁄ Hz
cm Hz / W
NEP
D*
5.9 x 10 (Typ.)
1.3 x 10 (Typ.)
12
13
3.9 x 10 (Typ.)
1.7 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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