Datasheet > VTB8441B

VTB8441B

更新时间： 2024-11-21 11:48:35

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		光电二极管光电二极管
页数	文件大小	规格书
1页	29K
描述
VTB Process Photodiodes

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技术参数
数据手册

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VTB8441B 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.83	最大暗电源：	0.1 nA
安装特点：	THROUGH HOLE MOUNT	最高工作温度：	70 °C
最低工作温度：	-20 °C	半导体材料：	Silicon
子类别：	Photo Diodes	表面贴装：	NO
Base Number Matches：	1

VTB8441B 数据手册

VTB Process Photodiodes

VTB8440B, 8441B

PACKAGE DIMENSIONS inch (mm)

CASE 21F 8 mm CERAMIC

CHIP ACTIVE AREA: .008 in²(5.16 mm²)

PRODUCT DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

Planar silicon photodiode in recessed ceramic

package. The package incorporates an infrared

rejection filter. These diodes have very high

shunt resistance and have good blue response.

Storage Temperature:

Operating Temperature:

-20°C to 75°C

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)

VTB8440B

VTB8441B

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

UNITS

Min.

Typ.

Max.

.08

Min.

Typ.

Max.

.08

Short Circuit Current

Temperature Coefficient

H = 100 fc, 2850 K

2850 K

µA

%/°C

TC I

.02

420

-2.0

.02

420

-2.0

Open Circuit Voltage

Temperature Coefficient

H = 100 fc, 2850 K

2850 K

TC V

mV/°C

Dark Current

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

2000

720

100

720

Shunt Resistance

.07

-8.0

1.0

1.4

-8.0

1.0

GΩ

TC R

Temperature Coefficient

%/°C

Junction Capacitance

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

330

range

580

1/2

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

±50

-13

±50

-14

Degrees

W⁄ Hz

cm Hz / W

NEP

1.1 x 10 (Typ.)

2.4 x 10 (Typ.)

2.2 x 10 (Typ.)

9.7 x 10 (Typ.)

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

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