Datasheet > VTB5051UVJ

VTB5051UVJ

更新时间： 2024-11-20 22:15:19

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		光电二极管光电二极管
页数	文件大小	规格书
1页	31K
描述
VTB Process Photodiodes

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VTB5051UVJ 数据手册

VTB Process Photodiodes

VTB5051UVJ

PACKAGE DIMENSIONS inch (mm)

CASE 14A TO-5 HERMETIC

CHIP ACTIVE AREA: .023 in²(14.8 mm²)

PRODUCT DESCRIPTION

Planar silicon photodiode in a three lead TO-5

ABSOLUTE MAXIMUM RATINGS

package with a UV transmitting “flat” window.

Chip is isolated from the case. The third lead

allows case to be grounded. These diodes have

very high shunt resistance and have good blue

response.

Storage Temperature:

Operating Temperature:

-40°C to 110°C

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)

VTB5051UVJ

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

UNITS

Min.

Typ.

Max.

.23

Short Circuit Current

I Temperature Coefficient

H = 100 fc, 2850 K

2850 K

130

.12

µA

%/°C

TC I

Open Circuit Voltage

Temperature Coefficient

H = 100 fc, 2850 K

2850 K

490

-2.0

TC V

mV/°C

Dark Current

H = 0, VR = 2.0 V

H = 0, V = -10 mV

H = 0, V = 0

250

Shunt Resistance

.56

-8.0

3.0

0.1

GΩ

TC R

Temperature Coefficient

%/°C

Junction Capacitance

Sensitivity

365 nm

A/W

Sensitivity

220 nm

.038

200

A/W

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

1100

range

920

1/2

±50

Degrees

W⁄ Hz

cm Hz / W

-14

NEP

2.1 x 10 (Typ.)

1.8 x 10 (Typ.)

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

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