Datasheet > VTB6061B

VTB6061B

更新时间： 2024-01-26 12:00:03

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		光电二极管光电二极管
页数	文件大小	规格书
1页	34K
描述
VTB Process Photodiodes

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中文翻译

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技术参数
数据手册

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VTB6061B 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.59
最大暗电源：	2 nA	安装特点：	THROUGH HOLE MOUNT
最高工作温度：	110 °C	最低工作温度：	-40 °C
半导体材料：	Silicon	子类别：	Photo Diodes
表面贴装：	NO	Base Number Matches：	1

VTB6061B 数据手册

VTB Process Photodiodes

VTB6061B

PACKAGE DIMENSIONS inch (mm)

CASE 15 TO-8 HERMETIC

CHIP ACTIVE AREA: .058 in²(37.7 mm²)

PRODUCT DESCRIPTION

Large area planar silicon photodiode in a “flat”

ABSOLUTE MAXIMUM RATINGS

window, dual lead TO-8 package. The package

incorporates an infrared rejection filter. Cathode

is common to the case. These diodes have very

high shunt resistance and have good blue

response.

Storage Temperature:

Operating Temperature:

-40°C to 110°C

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)

VTB6061B

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

UNITS

Min.

Typ.

Max.

.08

Short Circuit Current

I Temperature Coefficient

H = 100 fc, 2850 K

2850 K

.02

µA

%/°C

TC I

Open Circuit Voltage

Temperature Coefficient

H = 100 fc, 2850 K

2850 K

420

-2.0

TC V

mV/°C

Dark Current

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

2.0

Shunt Resistance

.10

-8.0

8.0

GΩ

TC R

Temperature Coefficient

%/°C

Junction Capacitance

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

330

720

range

580

1/2

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

±55

Degrees

W⁄ Hz

cm Hz / W

-13

NEP

1.0 x 10 (Typ.)

6.1 x 10 (Typ.)

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

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