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VT2045CBP

更新时间: 2024-09-20 08:17:55
品牌 Logo 应用领域
威世 - VISHAY 电池
页数 文件大小 规格书
4页 121K
描述
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

VT2045CBP 数据手册

 浏览型号VT2045CBP的Datasheet PDF文件第2页浏览型号VT2045CBP的Datasheet PDF文件第3页浏览型号VT2045CBP的Datasheet PDF文件第4页 
New Product  
VT2045CBP  
Vishay General Semiconductor  
Trench MOS Barrier Schottky Rectifier  
for PV Solar Cell Bypass Protection  
Ultra Low VF = 0.33 V at IF = 5.0 A  
FEATURES  
TMBS®  
TO-220AB  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Halogen-free according to IEC 61249-2-21 definition  
3
2
1
VT2045CBP  
TYPICAL APPLICATIONS  
For use in solar cell junction box as a bypass diode for  
protection, using DC forward current without reverse bias.  
PIN 1  
PIN 2  
CASE  
PIN 3  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
2 x 10 A  
45 V  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
VRRM  
commercial grade  
IFSM  
160 A  
0.41 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 10 A  
TOP max.  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VT2045CBP  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
45  
20  
10  
V
per device  
per diode  
(1)  
Maximum average forward rectified current (fig. 1)  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
160  
- 40 to + 150  
200  
A
Operating junction and storage temperature range  
TOP, TSTG  
°C  
°C  
Junction temperature in DC forward current  
without reverse bias, t 1 h  
(2)  
TJ  
Notes  
(1)  
With heatsink  
(2)  
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test  
Document Number: 89364  
Revision: 26-Oct-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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