5秒后页面跳转
VT2080S PDF预览

VT2080S

更新时间: 2024-09-20 07:16:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 148K
描述
Trench MOS Barrier Schottky Rectifier

VT2080S 数据手册

 浏览型号VT2080S的Datasheet PDF文件第2页浏览型号VT2080S的Datasheet PDF文件第3页浏览型号VT2080S的Datasheet PDF文件第4页浏览型号VT2080S的Datasheet PDF文件第5页 
New Product  
VT2080S, VFT2080S, VBT2080S, VIT2080S  
Vishay General Semiconductor  
Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.46 V at IF = 5 A  
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB, ITO-220AB, and  
TO-262AA package)  
3
3
2
2
1
1
VT2080S  
VFT2080S  
TO-262AA  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PIN 1  
PIN 3  
PIN 1  
PIN 3  
PIN 2  
CASE  
PIN 2  
TO-263AB  
TYPICAL APPLICATIONS  
K
K
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
A
3
NC  
VBT2080S  
2
1
VIT2080S  
MECHANICAL DATA  
NC  
A
K
PIN 1  
PIN 3  
PIN 2  
K
Case:  
TO-220AB,  
ITO-220AB,  
TO-263AB  
and  
HEATSINK  
TO-262AA  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
IF(AV)  
VRRM  
IFSM  
20 A  
80 V  
150 A  
Polarity: As marked  
VF at IF = 20 A  
TJ max.  
0.70 V  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL VT2080S VFT2080S VBT2080S VIT2080S UNIT  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
80  
20  
V
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
EAS  
150  
160  
1.0  
A
mJ  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH  
Peak repetitive reverse current at tp = 2 µs, 1 kHz,  
TJ = 38 °C 2 °C  
IRRM  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 89167  
Revision: 08-Sep-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

与VT2080S相关器件

型号 品牌 获取价格 描述 数据表
VT2080S_12 VISHAY

获取价格

Trench MOS Barrier Schottky Rectifier
VT2080S-E3/4W VISHAY

获取价格

Trench MOS Barrier Schottky Rectifier
VT2080SHM3/4W VISHAY

获取价格

DIODE 20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VT2080SHM3-4W VISHAY

获取价格

Trench MOS Barrier Schottky Rectifier
VT2080S-M3/4W VISHAY

获取价格

DIODE 20 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VT2080S-M3-4W VISHAY

获取价格

Trench MOS Barrier Schottky Rectifier
VT20A114 ETC

获取价格

VT20A432 ETC

获取价格

VT20A802 ETC

获取价格

VT20N1 ETC

获取价格