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VS-HFA04SD60SL-M3 PDF预览

VS-HFA04SD60SL-M3

更新时间: 2024-11-07 01:16:27
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威世 - VISHAY /
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8页 158K
描述
Ultrasoft recovery

VS-HFA04SD60SL-M3 数据手册

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VS-HFA04SD60S-M3  
Vishay Semiconductors  
www.vishay.com  
HEXFRED®,  
Ultrafast Soft Recovery Diode, 4 A  
FEATURES  
2, 4  
• Ultrafast recovery time  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
1
N/C  
3
• Guaranteed avalanche  
Anode  
TO-252AA (D-PAK)  
• Specified at operating temperature  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
BENEFITS  
• Reduced RFI and EMI  
Package  
TO-252AA (D-PAK)  
4 A  
IF(AV)  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
VR  
600 V  
VF at IF  
1.4 V  
t
rr typ.  
17 ns  
TJ max.  
150 °C  
• Reduced parts count  
Diode variation  
Single die  
DESCRIPTION / APPLICATIONS  
These diodes are optimized to reduce losses and EMI / RFI  
in high frequency power conditioning systems. The softness  
of the recovery eliminates the need for a snubber in  
most applications. These devices are ideally suited for  
freewheeling, flyback, power converters, motor drives, and  
other applications where high speed and reduced switching  
losses are design requirements.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
TC = 100 °C  
4
IFSM  
25  
16  
A
Repetitive peak forward current  
Maximum power dissipation  
IFRM  
TC = 116 °C  
TC = 100 °C  
PD  
10  
W
Operating junction and storage temperatures  
TJ, TStg  
-55 to +150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
600  
-
-
IF = 4 A  
IF = 8 A  
-
-
-
-
-
-
-
1.5  
1.8  
1.4  
0.17  
44  
1.8  
2.2  
1.7  
3.0  
300  
8
V
Forward voltage  
See fig. 1  
VF  
IF = 4 A, TJ = 125 °C  
VR = VR rated  
Maximum reverse  
leakage current  
IR  
μA  
TJ = 125 °C, VR = 0.8 x VR rated  
VR = 200 V  
Junction capacitance  
Series inductance  
CT  
LS  
4
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 10-Jul-15  
Document Number: 93473  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-HFA04SD60SL-M3 替代型号

型号 品牌 替代类型 描述 数据表
HFA04SD60S VISHAY

完全替代

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-252, SMD-220,

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