Datasheet > VS-HFA04TB60-M3

VS-HFA04TB60-M3

更新时间： 2023-12-06 20:00:20

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	164K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 4 A

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VS-HFA04TB60-M3 数据手册

VS-HFA04TB60-M3

Vishay Semiconductors

www.vishay.com

HEXFRED^®Ultrafast Soft Recovery Diode, 4 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

• Designed and qualified according to

JEDEC^®-JESD 47

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

TO-220AC 2L

Base

cathode

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

Cathode

Anode

• Reduced parts count

DESCRIPTION

VS-HFA04TB60 is a state of the art ultrafast recovery diode.

Employing the latest in epitaxial construction and advanced

processing techniques it features a superb combination of

characteristics which result in performance which is

unsurpassed by any rectifier previously available. With basic

ratings of 600 V and 4 A continuous current, the

VS-HFA04TB60... is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the

t_bportion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA04TB60... is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRIMARY CHARACTERISTICS

I_F(AV)

4 A

600 V

V_R

V_Fat I_F

1.4 V

_rrtyp.

17 ns

T_Jmax.

Package

150 °C

TO-220AC 2L

Single

Circuit configuration

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

600

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

Maximum repetitive forward current

T_C= 25 °C

Maximum power dissipation

P_D

T_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

-55 to +150

°C

Revision: 16-Dec-2021

Document Number: 96187

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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