Datasheet > VS-EPU3006-N3

VS-EPU3006-N3

更新时间： 2022-03-25 19:36:52

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	230K
描述
Ultrafast Rectifier, 30 A FRED Pt

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VS-EPU3006-N3 数据手册

New Product

VS-APU3006-F3, VS-APU3006-N3, VS-EPU3006-F3, VS-EPU3006-N3

www.vishay.com

Vishay Semiconductors

Ultrafast Rectifier, 30 A FRED Pt^®

FEATURES

• Low forward voltage drop

• Ultrafast recovery time

• 175 °C operating junction temperature

• Designed and qualified according to

JEDEC-JESD47

TO-247AC

TO-247AC modiﬁed

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Base cathode

4, 2

Base cathode

DESCRIPTION/APPLICATIONS

Ultralow V_F, soft-switching ultrafast rectifiers optimized for

Discontinuous (Critical) Mode (DCM) Power Factor

Correction (PFC).

Anode

Cathode

Anode

VS-APU3006-F3

VS-APU3006-N3

VS-EPU3006-F3

VS-EPU3006-N3

The minimized conduction loss, optimized stored charge

and low recovery current minimized the switching losses

and reduce over dissipation in the switching element and

snubbers.

The device is also intended for use as a freewheeling diode

in power supplies and other power switching applications.

PRODUCT SUMMARY

TO-247AC,

TO-247AC modified (2 pins)

Package

I_F(AV)

V_R

30 A

600 V

APPLICATIONS

AC/DC SMPS 70 W to 400 W

e.g. laptop and printer AC adaptors, desktop PC, TV and

monitor, games units, and DVD AC/DC power supplies.

V_Fat I_F

2 V

_rrtyp.

30 ns

T_Jmax.

175 °C

Single die

Diode variation

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

MAX.

600

UNITS

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak surge current

I_F(AV)

T_C= 127 °C

T_C= 25 °C

I_FSM

220

Operating junction and storage

temperatures

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 30 A

600

1.4

1.15

1.35

250

Forward voltage

V_F

I_R

I_F= 30 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

8.0

Measured lead to lead 5 mm from package body

Revision: 05-Apr-12

Document Number: 93570

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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