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VS-ETH3006STRR-M3 PDF预览

VS-ETH3006STRR-M3

更新时间: 2024-01-11 20:34:24
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管超快速软恢复二极管
页数 文件大小 规格书
10页 237K
描述
DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode

VS-ETH3006STRR-M3 技术参数

生命周期:Active零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.34
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE应用:HYPERFAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.65 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
最大非重复峰值正向电流:180 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向电流:30 µA
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-ETH3006STRR-M3 数据手册

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VS-ETH3006S-M3, VS-ETH3006-1-M3  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 30 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
• Designed and qualified according to  
JEDEC®-JESD 47  
TO-263AB (D2PAK)  
TO-262AA  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
Base  
cathode  
2
2
DESCRIPTION/APPLICATIONS  
Hyperfast recovery rectifiers designed with optimized  
performance of forward voltage drop, hyperfast recovery  
time, and soft recovery.  
3
1
N/C  
3
1
N/C  
Anode  
Anode  
VS-ETH3006S-M3  
VS-ETH3006-1-M3  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
PRODUCT SUMMARY  
These devices are intended for use in PFC Boost stage in  
the AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
30 A  
600 V  
VR  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
VF at IF  
1.4 V  
trr (typ.)  
TJ max.  
Diode variation  
27 ns  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Repetitive peak reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
V
IF(AV)  
TC = 95 °C  
TC = 25 °C  
30  
A
IFSM  
180  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
VBR  
VR  
,
IR = 100 μA  
IF = 30 A  
600  
-
-
blocking voltage  
V
-
-
-
-
-
-
2.0  
1.4  
0.02  
50  
2.65  
1.8  
30  
300  
-
Forward voltage  
VF  
IR  
IF = 30 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
20  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 08-Jul-15  
Document Number: 93574  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-ETH3006STRR-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-ETH3006STRL-M3 VISHAY

完全替代

DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PL
VS-ETH3006S-M3 VISHAY

类似代替

DIODE 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PL

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