Datasheet > VS-ETU1506-1-M3

VS-ETU1506-1-M3

更新时间： 2024-10-31 01:22:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	199K
描述
Ultrafast recovery time

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中文翻译

获取价格

数据手册

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VS-ETU1506-1-M3 数据手册

VS-ETU1506S-M3, VS-ETU1506-1-M3

www.vishay.com

Vishay Semiconductors

Ultrafast Rectifier, 15 A FRED Pt^®

FEATURES

• Low forward voltage drop

• Ultrafast recovery time

• 175 °C operating junction temperature

• Low leakage current

TO-263AB (D²PAK)

TO-262AA

• Designed and qualified according to

JEDEC^®-JESD 47

Base

cathode

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

DESCRIPTION

State of the art, ultralow V_F, soft-switching ultrafast rectifiers

optimized for Discontinuous (Critical) Mode (DCM) Power

Factor Correction (PFC).

N/C

Anode

VS-ETU1506S-M3

VS-ETU1506-1-M3

The minimized conduction loss, optimized stored charge

and low recovery current minimized the switching losses

and reduce over dissipation in the switching element and

snubbers.

PRODUCT SUMMARY

Package

TO-263AB (D²PAK), TO-262AA

The device is also intended for use as a freewheeling diode

in power supplies and other power switching applications.

I_F(AV)

15 A

600 V

V_R

APPLICATIONS

V_Fat I_F

1.1 V

AC/DC SMPS 70 W to 400 W

t_rr(typ.)

T_Jmax.

Diode variation

24 ns

e.g. laptop and printer AC adaptors, desktop PC, TV and

monitor, games units, and DVD AC/DC power supplies.



175 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

MAX.

600

UNITS

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

I_F(AV)

T_C= 143 °C

T_C= 25 °C

I_FSM

160

T_J, T_Stg

-65 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 15 A

600

1.35

1.1

0.01

1.9

1.3

200

Forward voltage

V_F

I_R

I_F= 15 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Revision: 09-Jul-15

Document Number: 93590

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

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与VS-ETU1506-1-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-ETU1506FP-M3	VISHAY	获取价格	DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220, HALOGEN FREE AND ROHS COMPLIANT, TO-2
VS-ETU1506-M3	VISHAY	获取价格	DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT PAC
VS-ETU1506S2LHM3	VISHAY	获取价格	Ultrafast Rectifier, 15 A FRED Pt?
VS-ETU1506S-M3	VISHAY	获取价格	Ultrafast recovery time
VS-ETU1506STRLHM3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-ETU1506STRL-M3	VISHAY	获取价格	DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PL
VS-ETU1506STRRHM3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-ETU1506STRR-M3	VISHAY	获取价格	DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PL
VS-ETU2006S2LHM3	VISHAY	获取价格	Ultrafast Rectifier, 20 A FRED Pt?
VS-ETU3006-1HM3	VISHAY	获取价格	Rectifier Diode,

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