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VS-ETU1506STRRHM3 PDF预览

VS-ETU1506STRRHM3

更新时间: 2024-12-01 21:21:15
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 185K
描述
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-ETU1506STRRHM3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:22 weeks风险等级:5.71
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.9 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
最大非重复峰值正向电流:160 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:600 V最大反向电流:15 µA
最大反向恢复时间:0.028 µs表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-ETU1506STRRHM3 数据手册

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VS-ETU1506SHM3, VS-ETU1506-1HM3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 15 A FRED Pt®  
FEATURES  
VS-ETU1506SHM3  
VS-ETU1506-1HM3  
• Low forward voltage drop  
• Ultrafast recovery time  
• 175 °C operating junction temperature  
• Low leakage current  
2
1
3
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
3
2
1
D2PAK  
TO-262  
• AEC-Q101 qualified  
Base  
cathode  
2
• Meets JESD 201 class 1 whisker test  
2
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION/APPLICATIONS  
State of the art, ultralow VF, soft-switching ultrafast rectifiers  
optimized for Discontinuous (Critical) Mode (DCM) Power  
Factor Correction (PFC).  
3
1
N/C  
3
1
N/C  
Anode  
Anode  
The minimized conduction loss, optimized stored charge  
and low recovery current minimized the switching losses  
and reduce over dissipation in the switching element and  
snubbers.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
15 A  
600 V  
The device is also intended for use as a freewheeling diode  
in power supplies and other power switching applications.  
VR  
VF at IF  
1.9 V  
APPLICATIONS  
trr (typ.)  
TJ max.  
Diode variation  
24 ns  
AC/DC SMPS 70 W to 400 W  
e.g. laptop and printer AC adaptors, desktop PC, TV and  
monitor, games units, and DVD AC/DC power supplies.  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
MAX.  
600  
15  
UNITS  
Repetitive peak reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
V
IF(AV)  
TC = 143 °C  
TC = 25 °C  
A
IFSM  
160  
Operating junction and storage  
temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 15 A  
600  
-
-
V
-
-
-
-
-
-
1.35  
1.1  
0.01  
20  
1.9  
1.3  
15  
200  
-
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
12  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 30-Sep-13  
Document Number: 94853  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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