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VS-ETU0805-M3 PDF预览

VS-ETU0805-M3

更新时间: 2024-10-30 20:42:47
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管超高速软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
9页 172K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 500V V(RRM), Silicon, TO-220AC,

VS-ETU0805-M3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:22 weeks
风险等级:5.75其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:HYPER ULTRA FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:110 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:500 V最大反向电流:9 µA
最大反向恢复时间:0.054 µs表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-ETU0805-M3 数据手册

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VS-ETU0805-M3, VS-ETU0805FP-M3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 8 A FRED Pt®  
FEATURES  
• Low forward voltage drop  
• Ultrafast soft recovery time  
• 175 °C operating junction temperature  
• Low leakage current  
• Fully isolated package (VINS = 2500 VRMS  
)
2L TO-220AC  
2L TO-220 FULL-PAK  
• True 2 pin package  
Base  
cathode  
2
• Designed and qualified according to JEDEC-JESD47  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION  
1
3
1
2
Ultralow VF, soft-switching ultrafast rectifiers optimized for  
Discontinuous (Critical) Mode (DCM) Power Factor  
Correction (PFC).  
Cathode  
Anode  
Cathode  
Anode  
VS-ETU0805-M3  
VS-ETU0805FP-M3  
The minimized conduction loss, optimized stored charge  
and low recovery current minimized the switching losses  
and reduce over dissipation in the switching element and  
snubbers.  
PRODUCT SUMMARY  
Package  
2L TO-220AC, 2L TO-220FP  
IF(AV)  
8 A  
500 V  
The device is also intended for use as a freewheeling diode  
in power supplies and other power switching applications.  
VR  
VF at IF  
1.25 V  
28 ns  
APPLICATIONS  
AC/DC SMPS 70 W to 400 W  
e.g. laptop and printer AC adaptors, desktop PC, TV and  
monitor, games units and DVD AC/DC power supplies.  
trr (typ.)  
TJ max.  
Diode variation  
175 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
500  
V
TC = 151 °C  
C = 124 °C  
TJ = 25 °C  
Average rectified forward current in DC  
IF(AV)  
8
FULL-PAK  
T
A
Non-repetitive peak surge current  
IFSM  
110  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
500  
-
-
V
-
-
-
-
-
-
1.05  
0.9  
0.005  
5
1.25  
1.03  
9
Forward voltage  
VF  
IR  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 500 V  
50  
-
Junction capacitance  
Series inductance  
CT  
LS  
6
pF  
nH  
Measured lead to lead 5 mm from package body  
8
-
Revision: 11-Mar-13  
Document Number: 94813  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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