Datasheet > VS-ETL015Y120H

VS-ETL015Y120H

更新时间： 2024-01-10 22:00:15

品牌	Logo	应用领域
威世 - VISHAY		栅
页数	文件大小	规格书
12页	328K
描述
Insulated Gate Bipolar Transistor

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VS-ETL015Y120H 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	Factory Lead Time：	20 weeks 1 day
风险等级：	5.73	Base Number Matches：	1

VS-ETL015Y120H 数据手册

VS-ETL015Y120H

Vishay Semiconductors

www.vishay.com

EMIPAK-2B PressFit Power Module

Double Interleaved Boost Converter, 15 A

FEATURES

• Trench IGBT technology

• HEXFRED clamping diode technology

• Rectifier bypass diode

• PressFit pins technology

• Exposed Al₂O₃substrate with low thermal resistance

• Integrated thermistor

• 10 μs short circuit capability

• Square RBSOA

EMIPAK-2B

(package example)

• Operating frequency up to 20 kHz

• Low internal inductances

• Low switching loss

PRODUCT SUMMARY

• UL approved file E78996

RECTIFIER BYPASS DIODE

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

V_RRM

1200 V

1.04 V

62 A

_FMtypical at I_F= 20 A

I_Fat T_C= 80 °C

DESCRIPTION

PFC IGBT

VS-ETL015Y120H is an integrated solution for a double

interleaved boost converter. The EMIPAK-2B package is

easy to use thanks to the PressFit pins and the exposed

substrate provides improved thermal performance. The

optimized layout also helps to minimize stray parameters,

allowing for better EMI performance.

V_CES

1200 V

2.61 V

_CE(ON)typical at I_C= 15 A

_Cat T_C= 80 °C

Package

15 A

EMIPAK-2B

Circuit

Double interleaved boost converter

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

T_J= 25 °C, all terminals shorted, f = 50 Hz, t = 1 s

T_C= 25 °C

MAX.

150

UNITS

Operating junction temperature

Storage temperature range

RMS isolation voltage

T_J

°C

T_Stg

V_ISOL

-40 to 150

3500

DbpA - DbpB BYPASS DIODE

Repetitive peak reverse voltage

V_RRM

I_F

I_FSM

P_D

1200

Continuous output current

T_C= 80 °C

T_SINK= 80 °C

Surge current (non- repetitive)

Power dissipation

Rated V_RRMapplied

T_C= 25 °C

250

167

T_C= 80 °C

Ta1 - Ta2 - Tb1 - Tb2 PFC IGBT

Collector to emitter voltage

Gate to emitter voltage

V_CES

V_GES

I_CM

1200

Pulsed collector current

(1)

Clamped inductive load current

I_LM

T_C= 25 °C

Continuous collector current

I_C

T_C= 80 °C

T_SINK= 80 °C

T_C= 25 °C

T_C= 80 °C

Power dissipation

P_D

Revision: 17-Jan-14

Document Number: 94858

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...12

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