Datasheet > VS-ETH3007THN3

VS-ETH3007THN3

更新时间： 2023-12-06 20:08:44

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	178K
描述
Hyperfast Rectifier, 30 A FRED Pt?

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VS-ETH3007THN3 数据手册

VS-ETH3007THN3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 30 A FRED Pt^®

FEATURES

Base cathode

• Hyper fast and soft recovery

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• True 2 pin package

Available

• Designed and qualified according to

JEDEC^®-JESD 47

Anode

Cathode

TO-220AC 2L

• AEC-Q101 qualified, meets JESD 201 class 2 whisker test

LINKS TO ADDITIONAL RESOURCES

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

DESCRIPTION / APPLICATIONS

Ultra low V_F, soft-switching hyper fast rectifiers optimized

for discontinuous (critical) mode (DCM) power factor

correction (PFC).

The minimized conduction loss, optimized stored charge

and low recovery current minimized the switching losses

and reduce over dissipation in the switching element and

snubbers.

PRIMARY CHARACTERISTICS

I_F(AV)

30 A

650 V

1.4 V

V_R

V_Fat I_F

_rrtyp.

33 ns

175 °C

T_Jmax.

Package

The device is also intended for use as a freewheeling diode

in power supplies and other power switching applications.

TO-220AC 2L

Single

Circuit configuration

MECHANICAL DATA

Case: TO-220AC 2L

Molding compound meets UL 94 V-0 flammability rating

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

650

UNITS

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

I_F(AV)

T_C= 120 °C

T_J= 25 °C

I_FSM

210

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

650

TYP.

MAX. UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

I_F= 30 A

1.8

1.4

0.02

2.1

1.6

300

Forward voltage

V_F

I_F= 30 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 650 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

Revision: 28-Jan-2021

Document Number: 96064

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-ETH3007THN3相关器件

型号	品牌	获取价格	描述	数据表
VS-ETH3106FP-N3	VISHAY	获取价格	Hyperfast Rectifier, 30 A FRED Pt?
VS-ETL015Y120H	VISHAY	获取价格	Insulated Gate Bipolar Transistor
VS-ETL0806FP-M3	VISHAY	获取价格	Ultrafast Rectifier, 8 A FRED Pt?
VS-ETL0806-M3	VISHAY	获取价格	DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT PACK
VS-ETL1506-1HM3	VISHAY	获取价格	Rectifier Diode,
VS-ETL1506-1-M3	VISHAY	获取价格	DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PL
VS-ETL1506FP-M3	VISHAY	获取价格	DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220, HALOGEN FREE AND ROHS COMPLIANT, TO-2
VS-ETL1506-M3	VISHAY	获取价格	DIODE 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT PAC
VS-ETL1506SHM3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-ETL1506STRLHM3	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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