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VS-8CVH02HM3/I

更新时间： 2024-11-05 22:59:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 147K
描述
DIODE GEN PURPOSE 200V SLIMDPAK

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VS-8CVH02HM3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 2 x 4 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
eSMP® Series  
Base  
common  
cathode  
• 175 °C max. operating junction temperature  
• Low forward voltage drop reduced Qrr and  
soft recovery  
4
4
• Low leakage current  
• Very low profile - typical height of 1.3 mm  
• Polyimide passivation for high reliability  
standard  
• Ideal for automated placement  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
2
1
2
Common  
cathode  
3
1
3
Anode  
Anode  
SlimDPAK (TO-252AE)  
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
3D Models  
DESCRIPTION / APPLICATIONS  
State of the art hyper fast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS inverters or as freewheeling diodes.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 4 A  
200 V  
0.71 V  
16 ns  
VR  
VF at IF  
trr (typ.)  
TJ max.  
175 °C  
Package  
SlimDPAK (TO-252AE)  
Common cathode  
Circuit configuration  
MECHANICAL DATA  
Case: SlimDPAK (TO-252AE)  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
200  
V
per leg  
4
Average rectified forward current  
IF(AV)  
TC = 167 °C  
TJ = 25 °C, 10 ms sine pulse wave  
per device  
8
A
Non-repetitive peak surge current per leg  
Operating junction and storage temperatures  
IFSM  
100  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX.  
UNITS  
Breakdown voltage, blocking voltage  
VBR, VR  
IR = 100 μA  
200  
-
1.0  
1.14  
0.80  
1.0  
4
IF = 4 A  
-
-
-
-
-
-
-
-
0.88  
0.97  
0.71  
0.8  
-
IF = 8 A  
V
Forward voltage per leg  
VF  
IF = 4 A, TJ = 150 °C  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current per leg  
IR  
TJ = 125 °C, VR = VR rated  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
40  
μA  
pF  
-
80  
Junction capacitance per leg  
Revision: 11-Jan-2021  
CT  
17  
-
Document Number: 95667  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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