VS-4EVH02-M3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 4 A FRED Pt®
FEATURES
• Hyperfast recovery time
eSMP® Series
Heatsink
k
• 175 °C max. operating junction temperature
• Low forward voltage drop reduced Qrr and soft
recovery
k
• Low leakage current
1
• Very low profile - typical height of 1.3 mm
• Ideal for automated placement
2
1
Pin 1
Pin 2
• Polyimide passivation for high reliability standard
SlimDPAK (TO-252AE)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
LINKS TO ADDITIONAL RESOURCES
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
D
3D Models
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers with optimized
performance of forward voltage drop and hyper fast
recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance,
ruggedness, and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters, or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
IF(AV)
4 A
VR
200 V
0.71 V
16 ns
175 °C
VF at IF
trr (typ.)
TJ max.
Package
SlimDPAK (TO-252AE)
Single
Circuit configuration
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
200
V
IF(AV)
TC = 167 °C
TJ = 25 °C, 10 ms sine pulse wave
4
A
IFSM
100
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage, blocking voltage
V
BR, VR
IR = 100 μA
200
-
0.88
0.71
-
-
1.0
0.80
3
IF = 4 A
-
-
-
-
-
V
Forward voltage
VF
IF = 4 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
Junction capacitance
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 200 V
-
80
-
CT
17
Revision: 21-Apr-2023
Document Number: 96102
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000