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VS-4EWH02FN-M3 PDF预览

VS-4EWH02FN-M3

更新时间: 2024-09-15 20:11:11
品牌 Logo 应用领域
威世 - VISHAY 快速软恢复高电源软恢复二极管超快速软恢复二极管超快速软恢复高功率电源
页数 文件大小 规格书
8页 156K
描述
DIODE 4 A, 200 V, SILICON, RECTIFIER DIODE, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, Rectifier Diode

VS-4EWH02FN-M3 技术参数

生命周期:Active零件包装代码:TO-252AA
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.29
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:HYPERFAST SOFT RECOVERY HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.8 VJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:80 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.027 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-4EWH02FN-M3 数据手册

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VS-4EWH02FN-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 4 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
2, 4  
• 175 °C max. operating junction temperature  
• Output rectification freewheeling  
• Low forward voltage drop reduced Qrr and soft  
recovery  
1
N/C  
3
Anode  
• Low leakage current  
D-PAK (TO-252AA)  
• Compliant to RoHS Directive 2002/95/EC  
• Halogen-free according to IEC 61249-2-21 definition  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DESCRIPTION/APPLICATIONS  
PRODUCT SUMMARY  
State of the art hyperfast recovery rectifiers specifically  
designed with optimized performance of forward voltage  
drop and hyperfast recovery time.  
Package  
D-PAK (TO-252AA)  
4 A  
IF(AV)  
VR  
200 V  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
VF at IF  
0.95 V  
trr (typ.)  
TJ max.  
Diode variation  
23 ns  
175 °C  
Single die  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
200  
V
TC = 164 °C  
4
IFSM  
TJ = 25 °C  
80  
8
A
IFM  
TC = 164 °C, f = 20 kHz, d = 50 %  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 4 A  
200  
-
-
V
-
-
-
-
-
-
0.87  
0.71  
-
0.95  
0.80  
3
Forward voltage  
VF  
IR  
IF = 4 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
2
20  
-
Junction capacitance  
Series inductance  
CT  
LS  
17  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 14-Nov-11  
Document Number: 93258  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-4EWH02FN-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-4EWH02FNTR-M3 VISHAY

完全替代

DIODE RECTIFIER DIODE, Rectifier Diode
VS-4EWH02FNTRR-M3 VISHAY

类似代替

DIODE RECTIFIER DIODE, Rectifier Diode
VS-4EWH02FNTRL-M3 VISHAY

类似代替

DIODE RECTIFIER DIODE, Rectifier Diode

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