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VS-4EVH02-M3/I

更新时间： 2024-09-15 22:59:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 143K
描述
DIODE GEN PURPOSE 200V SLIMDPAK

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VS-4EVH02-M3/I 数据手册

 浏览型号VS-4EVH02-M3/I的Datasheet PDF文件第2页浏览型号VS-4EVH02-M3/I的Datasheet PDF文件第3页浏览型号VS-4EVH02-M3/I的Datasheet PDF文件第4页浏览型号VS-4EVH02-M3/I的Datasheet PDF文件第5页浏览型号VS-4EVH02-M3/I的Datasheet PDF文件第6页浏览型号VS-4EVH02-M3/I的Datasheet PDF文件第7页 
VS-4EVH02-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 4 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
eSMP® Series  
Heatsink  
k
• 175 °C max. operating junction temperature  
• Low forward voltage drop reduced Qrr and soft  
recovery  
k
• Low leakage current  
1
• Very low profile - typical height of 1.3 mm  
• Ideal for automated placement  
2
1
Pin 1  
Pin 2  
2
• Polyimide passivation for high reliability standard  
SlimDPAK (TO-252AE)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
LINKS TO ADDITIONAL RESOURCES  
• Meets JESD 201 class 2 whisker test  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D
3
D
3D Models  
DESCRIPTION / APPLICATIONS  
State of the art hyper fast recovery rectifiers with optimized  
performance of forward voltage drop and hyper fast  
recovery time.  
The planar structure and the platinum doped life time  
control guarantee the best overall performance,  
ruggedness, and reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS inverters, or as freewheeling  
diodes. Their extremely optimized stored charge and low  
recovery current minimize the switching losses and reduce  
over dissipation in the switching element and snubbers.  
PRIMARY CHARACTERISTICS  
IF(AV)  
4 A  
VR  
200 V  
0.71 V  
16 ns  
175 °C  
VF at IF  
trr (typ.)  
TJ max.  
Package  
SlimDPAK (TO-252AE)  
Single  
Circuit configuration  
MECHANICAL DATA  
Case: SlimDPAK (TO-252AE)  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
200  
V
IF(AV)  
TC = 167 °C  
TJ = 25 °C, 10 ms sine pulse wave  
4
A
IFSM  
100  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage, blocking voltage  
V
BR, VR  
IR = 100 μA  
200  
-
0.88  
0.71  
-
-
1.0  
0.80  
3
IF = 4 A  
-
-
-
-
-
V
Forward voltage  
VF  
IF = 4 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
80  
-
CT  
17  
Revision: 11-Jan-2021  
Document Number: 96102  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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