Datasheet > VS-12CTQPBF

VS-12CTQPBF

更新时间： 2024-11-26 01:11:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	129K
描述
Center tap TO-220 package

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-12CTQPBF 数据手册

VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 2 x 6 A

FEATURES

Base

common

cathode

• 175 °C T_Joperation

• Center tap TO-220 package

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Anode

TO-220AB

Common

cathode

Available

• Guard ring for enhanced ruggedness and long

term reliability

• Designed and qualified according to JEDEC^®-JESD 47

PRODUCT SUMMARY

Package

TO-220AB

2 x 6 A

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

I_F(AV)

V_R

35 V, 40 V, 45 V

0.53 V

DESCRIPTION

V_Fat I_F

The VS-12CTQ... center tap Schottky rectifier series has

been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable

operation up to 175 °C junction temperature. Typical

applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

_RMmax.

7 mA at 125 °C

175 °C

T_Jmax.

Diode variation

E_AS

Common cathode

8 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

Range

35 to 45

690

t_p= 5 μs sine

6 A_pk, T_J= 125 °C (per leg)

Range

0.53

T_J

-55 to +175

°C

VOLTAGE RATINGS

VS-

PARAMETER

SYMBOL

UNITS

12CTQ035PbF 12CTQ035-N3 12CTQ040PbF 12CTQ040-N3 12CTQ045PbF 12CTQ045-N3

Maximum DC

reverse voltage

V_R

Maximum working

peak reverse

voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

per leg

Maximum average forward

current. See fig. 5

I_F(AV)

50 % duty cycle at T_C= 160 °C, rectangular waveform

per device

690

140

Followinganyratedload

condition and with rated

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

Maximum peak one cycle non-repetitive

surge current per leg. See fig. 7

I_FSM

E_AS

I_AR

V_RRMapplied

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

T_J= 25 °C, I_AS= 1.20 A, L = 11.10 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

1.20

Revision: 21-Oct-15

Document Number: 94130

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与VS-12CTQPBF相关器件

型号	品牌	获取价格	描述	数据表
VS-12CTQS-M3	VISHAY	获取价格	Low forward voltage drop
VS-12CU-NR-IM2	FUJITSU	获取价格	POWER RELAY 1 POLE-15A
VS-12CU-NR-SM2	FUJITSU	获取价格	POWER RELAY 1 POLE-15A
VS-12CU-NR-UC	FUJITSU	获取价格	POWER RELAY 1 POLE-15A
VS-12CWQ03FN-M3	VISHAY	获取价格	Low forward voltage drop
VS-12CWQ03FNPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 6 A
VS-12CWQ03FNTRL-M3	VISHAY	获取价格	Low forward voltage drop
VS-12CWQ03FNTR-M3	VISHAY	获取价格	Low forward voltage drop
VS-12CWQ03FNTRPBF	VISHAY	获取价格	Schottky Rectifier, 2 x 6 A
VS-12CWQ03FNTRR-M3	VISHAY	获取价格	DIODE 30 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SIMILAR TO

与VS-12CTQPBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-12CTQPBF

VS-12CTQPBF 数据手册

与VS-12CTQPBF相关器件

与VS-12CTQPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-12CTQPBF

VS-12CTQPBF 数据手册

与VS-12CTQPBF相关器件

与VS-12CTQPBF相关文章

您还可以找

您在本页遇到什么问题？