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VS-12CWQ03FNTRR-M3 PDF预览

VS-12CWQ03FNTRR-M3

更新时间: 2024-11-27 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
7页 160K
描述
DIODE 30 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode

VS-12CWQ03FNTRR-M3 技术参数

生命周期:Active零件包装代码:TO-252AA
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:1.51其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:320 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:6 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

VS-12CWQ03FNTRR-M3 数据手册

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VS-12CWQ03FN-M3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 2 x 6 A  
FEATURES  
Base  
common  
cathode  
4
• Low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Popular D-PAK outline  
• Center tap configuration  
• Small foot print, surface mountable  
• High frequency operation  
2
Common  
cathode  
DPAK (TO-252AA)  
1
3
Anode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 6 A  
30 V  
DESCRIPTION  
VR  
The VS-12CWQ03FN-M3 surface mount, center tap,  
Schottky rectifier series has been designed for applications  
requiring low forward drop and small foot prints on PC  
board. Typical applications are in disk drives, switching  
power supplies, converters, freewheeling diodes, battery  
charging, and reverse battery protection.  
VF at IF  
0.37 V  
IRM  
TJ max.  
58 mA at 125 °C  
150 °C  
EAS  
10 mJ  
Package  
DPAK (TO-252AA)  
Common cathode  
Circuit configuration  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
12  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
30  
tp = 5 μs sine  
320  
A
6 Apk, TJ = 125 °C (per leg)  
Range  
0.37  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-12CWQ03FN-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
30  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
per leg  
6
Maximum average forward  
current, see fig. 5  
IF(AV)  
50 % duty cycle at TC = 135 °C, rectangular waveform  
A
per device  
12  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
320  
Maximum peak one cycle non-repetitive  
surge current per leg, see fig. 7  
IFSM  
EAS  
IAR  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 2.0 A, L = 5 mH  
130  
10  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2.0  
Revision: 04-Jan-18  
Document Number: 93285  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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