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VS-12CTQ045STRR-M3 PDF预览

VS-12CTQ045STRR-M3

更新时间: 2024-11-25 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 187K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-12CTQ045STRR-M3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:26 weeks
风险等级:5.71其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.73 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:140 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:45 V最大反向电流:800 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

VS-12CTQ045STRR-M3 数据手册

 浏览型号VS-12CTQ045STRR-M3的Datasheet PDF文件第2页浏览型号VS-12CTQ045STRR-M3的Datasheet PDF文件第3页浏览型号VS-12CTQ045STRR-M3的Datasheet PDF文件第4页浏览型号VS-12CTQ045STRR-M3的Datasheet PDF文件第5页浏览型号VS-12CTQ045STRR-M3的Datasheet PDF文件第6页浏览型号VS-12CTQ045STRR-M3的Datasheet PDF文件第7页 
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 6 A  
FEATURES  
D2PAK  
• 175 °C TJ operation  
TO-262  
• Center tap configuration  
• Low forward voltage drop  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• High frequency operation  
• Guard ring for enhanced ruggedness and long  
term reliability  
Base  
common  
cathode  
Base  
common  
cathode  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
2
2
• Designed and qualified according to JEDEC®-JESD 47  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
DESCRIPTION  
VS-12CTQ...-1-M3  
VS-12CTQ...S-M3  
The VS-12CTQ... center tap Schottky rectifier series has  
been optimized for low reverse leakage at high temperature.  
The proprietary barrier technology allows for reliable  
operation up to 175 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 6 A  
35 V/40 V/45 V  
0.53 V  
VR  
VF at IF  
I
RM max.  
7.0 mA at 125 °C  
175 °C  
TJ max.  
EAS  
8 mJ  
Package  
TO-263AB (D2PAK), TO-262AA  
Diode variation  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
12  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
Range  
35 to 45  
690  
tp = 5 μs sine  
A
6 Apk, TJ = 125 °C (per leg)  
Range  
0.53  
V
TJ  
-55 to 175  
°C  
VOLTAGE RATINGS  
VS-12CTQ035S-M3  
VS-12CTQ040S-M3  
VS-12CTQ045S-M3  
PARAMETER  
SYMBOL  
UNITS  
VS-12CTQ035-1-M3 VS-12CTQ040-1-M3 VS-12CTQ045-1-M3  
Maximum DC reverse voltage  
VR  
35  
40  
45  
V
Maximum working peak reverse voltage  
VRWM  
Revision: 25-Feb-14  
Document Number: 94924  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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