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VS-12CTQ040-N3 PDF预览

VS-12CTQ040-N3

更新时间: 2024-11-26 01:11:55
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
6页 129K
描述
Center tap TO-220 package

VS-12CTQ040-N3 技术参数

生命周期:Obsolete包装说明:R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.37其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.73 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:690 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:40 V最大反向电流:800 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-12CTQ040-N3 数据手册

 浏览型号VS-12CTQ040-N3的Datasheet PDF文件第2页浏览型号VS-12CTQ040-N3的Datasheet PDF文件第3页浏览型号VS-12CTQ040-N3的Datasheet PDF文件第4页浏览型号VS-12CTQ040-N3的Datasheet PDF文件第5页浏览型号VS-12CTQ040-N3的Datasheet PDF文件第6页 
VS-12CTQ...PbF Series, VS-12CTQ...-N3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 6 A  
FEATURES  
Base  
common  
cathode  
• 175 °C TJ operation  
• Center tap TO-220 package  
2
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
Anode  
Anode  
TO-220AB  
Common  
cathode  
3
1
Available  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Designed and qualified according to JEDEC®-JESD 47  
PRODUCT SUMMARY  
Package  
TO-220AB  
2 x 6 A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
35 V, 40 V, 45 V  
0.53 V  
DESCRIPTION  
VF at IF  
The VS-12CTQ... center tap Schottky rectifier series has  
been optimized for low reverse leakage at high temperature.  
The proprietary barrier technology allows for reliable  
operation up to 175 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
I
RM max.  
7 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
8 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
12  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
Range  
A
V
35 to 45  
690  
tp = 5 μs sine  
A
6 Apk, TJ = 125 °C (per leg)  
Range  
0.53  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
VS-  
VS-  
VS-  
VS-  
VS-  
VS-  
PARAMETER  
SYMBOL  
UNITS  
12CTQ035PbF 12CTQ035-N3 12CTQ040PbF 12CTQ040-N3 12CTQ045PbF 12CTQ045-N3  
Maximum DC  
reverse voltage  
VR  
35  
35  
40  
40  
45  
45  
V
Maximum working  
peak reverse  
voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
per leg  
6
Maximum average forward  
current. See fig. 5  
IF(AV)  
50 % duty cycle at TC = 160 °C, rectangular waveform  
A
per device  
12  
690  
140  
8
Followinganyratedload  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
Maximum peak one cycle non-repetitive  
surge current per leg. See fig. 7  
IFSM  
EAS  
IAR  
A
VRRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.20  
Revision: 21-Oct-15  
Document Number: 94130  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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