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VS-10ETF06STRLPBF PDF预览

VS-10ETF06STRLPBF

更新时间: 2024-10-30 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 快速软恢复高电源软恢复二极管快速软恢复二极管高功率电源
页数 文件大小 规格书
8页 242K
描述
Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3

VS-10ETF06STRLPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
其他特性:FREE WHEELING DIODE应用:FAST SOFT RECOVERY HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:160 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.145 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:10
Base Number Matches:1

VS-10ETF06STRLPBF 数据手册

 浏览型号VS-10ETF06STRLPBF的Datasheet PDF文件第2页浏览型号VS-10ETF06STRLPBF的Datasheet PDF文件第3页浏览型号VS-10ETF06STRLPBF的Datasheet PDF文件第4页浏览型号VS-10ETF06STRLPBF的Datasheet PDF文件第5页浏览型号VS-10ETF06STRLPBF的Datasheet PDF文件第6页浏览型号VS-10ETF06STRLPBF的Datasheet PDF文件第7页 
VS-10ETF..SPbF Series  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 10 A  
FEATURES  
Base  
• Glass passivated pellet chip junction  
cathode  
+
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• Designed and qualified for industrial level  
2
• Material categorization:  
for definitions of compliance please see  
3
1
www.vishay.com/doc?99912  
1
3
TO-263AB (D2PAK)  
-
-
Anode  
Anode  
APPLICATIONS  
• Output rectification and freewheeling in inverters,  
choppers and converters  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
IF(AV)  
10 A  
200 V, 400 V, 600 V  
1.2 V  
VR  
DESCRIPTION  
VF at IF  
IFSM  
The VS-10ETF..SPbF fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time  
and low forward voltage drop.  
140 A  
trr  
50 ns  
TJ max.  
Diode variation  
Snap factor  
150 °C  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
trr  
CHARACTERISTICS  
VALUES  
200 to 600  
10  
UNITS  
V
Sinusoidal waveform  
A
140  
1 A, 100 A/μs  
10 A, TJ = 25 °C  
Range  
50  
ns  
V
VF  
1.2  
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-10ETF02SPbF  
VS-10ETF04SPbF  
VS-10ETF06SPbF  
200  
400  
600  
300  
500  
700  
2.5  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 128 °C, 180° conduction half sine wave  
VALUES  
10  
UNITS  
Maximum average forward current  
IF(AV)  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
115  
140  
66  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
Maximum I2t for fusing  
I2t  
A2s  
94  
Maximum I2t for fusing  
I2t  
940  
A2s  
Revision: 11-Feb-16  
Document Number: 94091  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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