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VNS3NV04D13TR PDF预览

VNS3NV04D13TR

更新时间： 2024-02-12 22:02:26
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
14页 249K
描述
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

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VNS3NV04D13TR 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SO-8针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.86
内置保护：TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
长度：4.9 mm功能数量：2
端子数量：8输出电流流向：SINK
标称输出峰值电流：5 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1.75 mm
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
断开时间：10 µs接通时间：1.35 µs
宽度：3.9 mm

VNS3NV04D13TR 数据手册

 浏览型号VNS3NV04D13TR的Datasheet PDF文件第2页浏览型号VNS3NV04D13TR的Datasheet PDF文件第3页浏览型号VNS3NV04D13TR的Datasheet PDF文件第4页浏览型号VNS3NV04D13TR的Datasheet PDF文件第6页浏览型号VNS3NV04D13TR的Datasheet PDF文件第7页浏览型号VNS3NV04D13TR的Datasheet PDF文件第8页 
VNS3NV04D  
PROTECTION FEATURES  
- OVERTEMPERATURE AND SHORT CIRCUIT  
PROTECTION: these are based on sensing the  
chip temperature and are not dependent on the  
input voltage. The location of the sensing element  
on the chip in the power stage area ensures fast,  
accurate detection of the junction temperature.  
Overtemperature cutout occurs in the range 150 to  
190 °C, a typical value being 170 °C. The device is  
automatically restarted when the chip temperature  
falls of about 15°C below shut-down temperature.  
During normal operation, the INPUT pin is  
electrically connected to the gate of the internal  
power MOSFET through a low impedance path.  
The device then behaves like a standard power  
MOSFET and can be used as a switch from DC to  
50KHz. The only difference from the user’s  
standpoint is that a small DC current IISS (typ.  
100µA) flows into the INPUT pin in order to supply  
the internal circuitry.  
- STATUS FEEDBACK: in the case of an  
overtemperature fault condition (Tj > Tjsh), the  
device tries to sink a diagnostic current Igf through  
the INPUT pin in order to indicate fault condition. If  
driven from a low impedance source, this current  
may be used in order to warn the control circuit of  
a device shutdown. If the drive impedance is high  
enough so that the INPUT pin driver is not able to  
supply the current Igf, the INPUT pin will fall to 0V.  
This will not however affect the device  
operation: no requirement is put on the current  
capability of the INPUT pin driver except to be  
able to supply the normal operation drive  
The device integrates:  
-
OVERVOLTAGE CLAMP PROTECTION:  
internally set at 45V, along with the rugged  
avalanche characteristics of the Power MOSFET  
stage give this device unrivalled ruggedness and  
energy handling capability. This feature is mainly  
important when driving inductive loads.  
- LINEAR CURRENT LIMITER CIRCUIT: limits  
the drain current ID to Ilim whatever the INPUT pin  
voltage. When the current limiter is active, the  
device operates in the linear region, so power  
dissipation may exceed the capability of the  
heatsink. Both case and junction temperatures  
increase, and if this phase lasts long enough,  
current IISS  
.
Additional features of this device are ESD  
protection according to the Human Body model  
and the ability to be driven from a TTL Logic  
circuit.  
junction  
temperature  
may  
reach  
the  
overtemperature threshold Tjsh  
.
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