Datasheet > VNS7NV0413TR

VNS7NV0413TR

更新时间： 2024-09-24 22:15:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
29页	489K
描述
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

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中文翻译

获取价格

数据手册

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VNS7NV0413TR 数据手册

VNN7NV04 / VNS7NV04

/ VND7NV04 / VND7NV04-1

“OMNIFET II”:

FULLY AUTOPROTECTED POWER MOSFET

TYPE

clamp

DS(on)

lim

VNN7NV04

VNS7NV04

VND7NV04

60 mΩ

6 A

40 V

SO-8

SOT-223

VND7NV04-1

LINEAR CURRENT LIMITATION

THERMAL SHUT DOWN

SHORT CIRCUIT PROTECTION

INTEGRATED CLAMP

LOW CURRENT DRAWN FROM INPUT PIN

DIAGNOSTIC FEEDBACK THROUGH INPUT

TO251 (IPAK)

TO252 (DPAK)

ORDER CODES

TUBE

PACKAGE

SOT-223

SO-8

T&R

VNN7NV04

VNS7NV04

VNN7NV0413TR

VNS7NV0413TR

VND7NV0413TR

ESD PROTECTION

TO-252 (DPAK) VND7NV04

TO-251 (IPAK) VND7NV04-1

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

COMPATIBLE WITH STANDARD POWER

MOSFET

MOSFETS from DC up to 50KHz applications.

Built in thermal shutdown, linear current limitation

and overvoltage clamp protects the chip in harsh

environments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

DESCRIPTION

The VNN7NV04, VNS7NV04, VND7NV04

VND7NV04-1, are monolithic devices designed in

STMicroelectronics VIPower M0-3 Technology,

intended for replacement of standard Power

BLOCK DIAGRAM

DRAIN

Overvoltage

Clamp

INPUT

Gate

Control

Linear

Current

Limiter

Over

Temperature

SOURCE

FC01000

February 2003

1/29

12 3 4 5 6 7...29

中文翻译

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