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VNS3NV04DPTR-E PDF预览

VNS3NV04DPTR-E

更新时间: 2024-11-13 12:02:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
21页 289K
描述
OMNIFET II fully autoprotected Power MOSFET

VNS3NV04DPTR-E 数据手册

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VNS3NV04DP-E  
OMNIFET II  
fully autoprotected Power MOSFET  
Features  
Max on-state resistance (per ch.)  
Current limitation (typ)  
RON  
ILIMH  
120 mΩ  
3.5 A  
Drain-source clamp voltage  
VCLAMP  
40 V  
®
SO-8  
ECOPACK : lead free and RoHS compliant  
Automotive Grade: compliance with AEC  
guidelines  
Description  
Linear current limitation  
Thermal shutdown  
The VNS3NV04DP-E device is made up of two  
monolithic chips (OMNIFET II) housed in a  
standard SO-8 package. The OMNIFET II is  
designed using STMicroelectronics™ VIPower™  
M0-3 technology and is intended for replacement  
of standard Power MOSFETs in up to 50 kHz DC  
applications.  
Short circuit protection  
Integrated clamp  
Low current drawn from input pin  
Diagnostic feedback through input pin  
ESD protection  
Built-in thermal shutdown, linear current limitation  
and overvoltage clamp protect the chip in harsh  
environments.  
Direct access to the gate of the Power  
MOSFET (analog driving)  
Fault feedback can be detected by monitoring  
voltage at the input pin  
Compatible with standard Power MOSFET  
Table 1.  
Device summary  
Package  
Order codes  
Tube  
Tape and reel  
SO-8  
VNS3NV04DP-E  
VNS3NV04DPTR-E  
March 2011  
Doc ID 018529 Rev 1  
1/21  
www.st.com  
1
 

VNS3NV04DPTR-E 替代型号

型号 品牌 替代类型 描述 数据表
VNS3NV04D13TR STMICROELECTRONICS

完全替代

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET
VNS3NV04DP-E STMICROELECTRONICS

完全替代

OMNIFET II fully autoprotected Power MOSFET

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TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5.77A I(D) | TO-204AA