VN3205

更新时间： 2024-11-17 22:15:39

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	460K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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VN3205 数据手册

VN3205

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

BV_DSS

R_DS(ON)

(max)

0.3Ω

V_GS(th)

(max)

2.4V

Order Number / Package

BV_DGS

TO-92

14-Pin P-DIP

VN3205N6

TO-243AA*

Die^†

50V

VN3205N3

VN3205N8

VN3205ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

†

MIL visual screening available

Product marking for TO-243AA:

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

verticalDMOSstructureandSupertex’swell-provensilicon-gate

manufacturingprocess.Thiscombinationproducesdeviceswith

thepowerhandlingcapabilitiesofbipolartransistorsandwiththe

high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS structures,

these devices are free from thermal runaway and thermally-

induced secondary breakdown.

VN2L❋

Where ❋ = 2-week alpha date code

Features

❏

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Supertex’sverticalDMOSFETsareideallysuitedtoawiderange

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Package Options

Applications

D₁

G₁

S₁

D₄

G₄

S₄

❏

Motor controls

Converters

Amplifiers

Switches

S₂

S₃

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

G₂

D₂

G₃

D₃

Absolute Maximum Ratings

Drain-to-Source Voltage

top view

BV_DSS

BV_DGS

± 20V

14-pin DIP

Drain-to-Gate Voltage

Gate-to-Source Voltage

TO-243AA

(SOT-89)

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

S G D

TO-92

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

中文翻译

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与VN3205相关器件

型号	品牌	获取价格	描述	数据表
VN3205_07	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N3	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal
VN3205N3-G	MICROCHIP	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN3205N3-GP002	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N3-G-P002	MICROCHIP	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN3205N3-GP003	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N3-GP005	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N3-GP013	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN3205N3-GP014	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs

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