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VN3205N3-G PDF预览

VN3205N3-G

更新时间： 2024-09-21 13:01:11
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 460K
描述
Small Signal Field-Effect Transistor, 1.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3

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VN3205N3-G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-92
包装说明：CYLINDRICAL, O-PBCY-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：7.48其他特性：HIGH INPUT IMPEDANCE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：50 V
最大漏极电流 (ID)：1.2 A最大漏源导通电阻：0.3 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：30 pF
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

VN3205N3-G 数据手册

 浏览型号VN3205N3-G的Datasheet PDF文件第2页浏览型号VN3205N3-G的Datasheet PDF文件第3页浏览型号VN3205N3-G的Datasheet PDF文件第4页 
VN3205  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
BVDSS  
/
RDS(ON)  
(max)  
0.3Ω  
VGS(th)  
(max)  
2.4V  
Order Number / Package  
BVDGS  
TO-92  
14-Pin P-DIP  
VN3205N6  
TO-243AA*  
Die†  
50V  
VN3205N3  
VN3205N8  
VN3205ND  
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.  
†
MIL visual screening available  
Product marking for TO-243AA:  
Advanced DMOS Technology  
These enhancement-mode (normally-off) transistors utilize a  
verticalDMOSstructureandSupertex’swell-provensilicon-gate  
manufacturingprocess.Thiscombinationproducesdeviceswith  
thepowerhandlingcapabilitiesofbipolartransistorsandwiththe  
high input impedance and positive temperature coefficient  
inherent in MOS devices. Characteristic of all MOS structures,  
these devices are free from thermal runaway and thermally-  
induced secondary breakdown.  
VN2L❋  
Where ❋ = 2-week alpha date code  
Features  
❏
❏
❏
❏
❏
❏
❏
❏
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Supertex’sverticalDMOSFETsareideallysuitedtoawiderange  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral Source-Drain diode  
High input impedance and high gain  
Complementary N- and P-channel devices  
Package Options  
Applications  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
D1  
G1  
S1  
D4  
G4  
S4  
❏
❏
❏
❏
❏
❏
Motor controls  
Converters  
Amplifiers  
Switches  
NC  
S2  
NC  
S3  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
G2  
D2  
G3  
D3  
8
Absolute Maximum Ratings  
Drain-to-Source Voltage  
top view  
BVDSS  
BVDGS  
± 20V  
14-pin DIP  
D
G
Drain-to-Gate Voltage  
D
S
Gate-to-Source Voltage  
TO-243AA  
(SOT-89)  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
S G D  
TO-92  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
1234

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VN3205N3-G 替代型号

型号 品牌 替代类型 描述 数据表
VN3205N3 SUPERTEX

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